Electronic device package having a dielectric layer and an encapsulant

1. A method for fabricating an electronic device package, the method comprising:

providing a carrier;

disposing a semiconductor chip onto the carrier, the semiconductor chip comprising a contact pad on a main face of the semiconductor chip;

applying a contact element onto the contact pad;

applying a dielectric layer on the carrier, the semiconductor chip, and the contact element; and

applying an encapsulant onto the dielectric layer.

2. The method of claim 1 , wherein the dielectric layer comprises one or more of a polymer layer, polyimide layer, a parylene layer, a polybenzoxazole layer, an epoxy resin layer, a silicone layer, a spin-on glass layer, a semiconductor oxide layer, a semiconductor nitride layer and a semiconductor oxynitride layer.

3. The method of claim 1 , wherein the dielectric layer comprises one or more of the following properties:

a dielectric constant in a range from 2 to 5;

a dielectric strength in a range from 100 V/μm to 500 V/μm;

a dissipation factor in a range from 0.005 to 0.03; and

a modulus of elasticity in a range from 0.1 to 5.0 GPa.

4. The method of claim 1 , wherein the dielectric layer is applied with a thickness in a range from 2 μm to 100 μm.

5. The method of claim 1 , wherein applying the dielectric layer comprises one or more of:

spin coating;

spray coating;

jet coating;

electrostatic coating and/or atomizing coating or ion atomizing;

wave coating;

potting;

filling;

laminating;

dipping;

physical vapor deposition;

chemical vapor deposition; and

printing.

6. The method of claim 1 , further comprising:

heating or curing the deposited dielectric layer at a heating temperature in a range up to 500° C. and a heating time in a range up to 5 h.

7. The method of claim 1 , wherein applying the dielectric layer comprises:

applying a stack of two or more dielectric layers of one or more of different materials or of different properties.

8. The method of 1 , wherein applying the dielectric layer comprises:

depositing a first dielectric layer and treating the deposited first dielectric layer with a first set of conditions; and

depositing a second dielectric layer and treating the deposited second dielectric layer with a second set of conditions different from the first set of conditions.

9. The method of claim 8 , wherein the first set of conditions comprises a first heating temperature and a first heating time, and wherein the second set of conditions comprises a second heating temperature and a second heating time.

10. The method of claim 1 , wherein applying the encapsulant comprises:

applying a host material comprising one or more of a resin, an epoxy silicone, an epoxy polyimide, a bismaleimide, a cyanate ester, and a thermoplast.

11. The method of claim 1 , wherein applying the encapsulant comprises:

applying a host material comprising filler increments embedded therein, the filler increments being made of SiO, Al2O3, ZnO, MgO, AlN, Si3N4, BN, a ceramic material, or a metallic material.

12. The method of claim 1 , wherein the encapsulant is applied by transfer molding, compression molding, vacuum casting, or laminating.