High aspect ratio gates
Embodiments are directed to a method of forming a feature of a semiconductor device. In one or more embodiments, the feature is a gate, and the method includes forming a substrate and forming a gate material extending over a major surface of the substrate. The method further includes forming a trench extending through the gate material and into the substrate in a first direction, wherein the trench further extends through the gate material and the substrate in a second direction. The method further includes filling the trench with a fill material and forming individual gates from the gate material, wherein the individual gates extend along a third direction.
1. A semiconductor structure comprising:
a first trench having at least one inner trench sidewall and extending into a substrate in a first direction and a second direction, wherein the first direction is substantially perpendicular to the second direction;
a first anchor formed in the first trench such that a bottom portion of the first anchor extends along and physically couples to at least a portion of the at least one inner trench sidewall;
a top portion of the first anchor extending above a major surface of the substrate; and
individual gate structures formed over the major surface of the substrate;
wherein the trench further extends through the substrate and gate material of the individual gate structures in a third direction;
wherein each of the individual gate structures comprises:
a first sidewall having a first height (H) dimension extending along the first direction and a first length (L) extending along the third direction;
a second sidewall formed from a portion of the at least one inner trench sidewall and having a thickness (T) dimension extending along the second direction and a second H dimension extending along the first direction; and
a third sidewall having a third H dimension extending along the first direction and a second L dimension extending along the third direction;
wherein T is less than H;
wherein each of the individual gate structures is physically coupled to the top portion of the first anchor.
2. The structure of claim 1 further comprising a second trench extending into the substrate in the first direction and the second direction.
3. The structure of claim 2 further comprising a second anchor formed in the second trench.
4. The structure of claim 3 further comprising a top portion of the second anchor extending above the major surface of the substrate.
5. The structure of claim 4 , wherein each of the individual gate structures is physically coupled to the top portion of the second anchor.
6. The structure of claim 5 , wherein a distance from the first trench to the second trench in the third direction matches a selected length dimension of each of the individual gate structures.
7. The structure of claim 6 , wherein the length dimension extends along the third direction.