IP Library Granted Patent US 10,955,599
Granted Patent B2
US 10,955,599 · App. 15/476,667 · Granted Mar 23, 2021

Light emitter devices, photoacoustic gas sensors and methods for forming light emitter devices

Inventors: Stephan Pindl (Ergoldsbach, DE); Christoph Glacer (Munich, DE)
Assignee: Infineon Technologies AG
G02B5/281G01N21/1702H05B3/34G01N2021/1704G01N2201/06186H05B2203/032
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,955,599
App. No.
15/476,667
Granted
Mar 23, 2021
Kind
B2
Abstract

A light emitter device includes an emitter component including a heater structure arranged on a membrane structure. The membrane structure is located above a first cavity. Additionally, the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component. Further, the heater structure is configured to emit light, if a predefined current flows through the heater structure. Additionally, the light emitter device includes a lid substrate having a recess. The lid substrate is attached to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate. Further, a pressure in the second cavity is less than 100 mbar.

Claims (51)

1. A light emitter device comprising:

an emitter component comprising a heater structure arranged on a membrane structure, wherein the membrane structure is located above a first cavity, wherein the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component, wherein the heater structure is configured to emit light, if a predefined current flows through the heater structure;

a lid substrate having a recess, wherein the lid substrate is attached to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate, and wherein a gas pressure in the second cavity is less than 100 mbar; and

a first layer located vertically between the second cavity and the lid substrate, wherein the first layer is selected from a first group consisting of a light reflective layer and a light absorptive layer.

2. The light emitter device of claim 1 , further comprising an optical filter structure located vertically between the first cavity and the supporting substrate.

3. The light emitter device of claim 1 , wherein the first cavity and the second cavity are connected through at least one opening through the membrane structure.

4. The light emitter device of claim 1 , further comprising a heater wiring structure for providing the predefined current, wherein the heater wiring structure comprises a via extending through the supporting substrate.

5. The light emitter device of claim 4 , wherein the heater wiring structure comprises a redistribution wiring within a redistribution layer located adjacent to a surface of the supporting substrate.

6. The light emitter device of claim 1 , further comprising a wiring structure for providing different voltages to a bias structure of the supporting substrate and to the membrane structure to electrostatically move at least a portion of the membrane structure towards the supporting substrate.

7. The light emitter device of claim 6 ,

wherein the bias structure of the supporting substrate comprises a first grounding layer located between the first cavity and the supporting substrate, and

wherein the wiring structure is electrically connected to the first grounding layer.

8. The light emitter device of claim 1 , wherein at least a portion of the supporting substrate comprises a substrate selected from a second group consisting of a semiconductor substrate and a glass substrate.

9. The light emitter device of claim 1 , wherein at least a portion of the lid substrate comprises a substrate selected from a second group consisting of a semiconductor substrate and a glass substrate.

10. The light emitter device of claim 1 , wherein the membrane structure comprises a heat spreader structure, and wherein an insulating layer is located between the heat spreader structure and the heater structure.

11. The light emitter device of claim 1 , wherein the heater structure is covered by a second insulating layer.

12. The light emitter device of claim 1 , wherein at least a portion of the heater structure has a shape selected from a second group consisting of a meander shape and a ring shape.

13. The light emitter device of claim 1 , wherein the lid substrate is attached to the emitter component in a gas-tight manner.

14. The light emitter device of claim 1 , wherein the lid substrate is anodic bonded to the emitter component in a gas-tight manner.

15. The light emitter device of claim 1 , wherein at an interface of the lid substrate and the supporting substrate a glass is in contact with a semiconductor material.

16. The light emitter device of claim 1 , wherein the heater structure is configured to emit light with a spectrum comprising a maximal intensity at a wavelength greater than 700 nm and less than 1 mm.

17. A photoacoustic gas sensor comprising the light emitter device of claim 1 .

18. A method for forming a light emitter device, the method comprising:

forming an emitter component comprising a heater structure arranged on a membrane structure, wherein the membrane structure is located above a first cavity, wherein the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component, wherein the heater structure is configured to emit light, if a predefined current flows through the heater structure;

attaching a lid substrate having a recess to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate, wherein a gas pressure in the second cavity is less than 100 mbar; and

forming a layer vertically between the second cavity and the lid substrate, wherein the layer is selected from a group consisting of a light reflective layer and a light absorptive layer.

19. A light emitter device comprising:

an emitter component comprising a heater structure arranged on a membrane structure, wherein the membrane structure is located above a first cavity, wherein the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component, wherein the heater structure is configured to emit light, if a predefined current flows through the heater structure;

a lid substrate having a recess, wherein the lid substrate is attached to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate, and wherein a pressure in the second cavity is less than 100 mbar; and

an optical filter structure located vertically between the first cavity and the supporting substrate.

20. A light emitter device comprising:

an emitter component comprising a heater structure arranged on a membrane structure, wherein the membrane structure is located above a first cavity, wherein the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component, wherein the heater structure is configured to emit light, if a predefined current flows through the heater structure; and

a lid substrate having a recess, wherein the lid substrate is attached to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate,

wherein the first cavity and the second cavity are connected through at least one opening through the membrane structure, and

wherein a pressure in the second cavity is less than 100 mbar.

21. A light emitter device comprising:

an emitter component comprising a heater structure arranged on a membrane structure, wherein the membrane structure is located above a first cavity, wherein the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component, wherein the heater structure is configured to emit light, if a predefined current flows through the heater structure;

a lid substrate having a recess, wherein the lid substrate is attached to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate, and wherein a pressure in the second cavity is less than 100 mbar; and

a heater wiring structure for providing the predefined current, wherein the heater wiring structure comprises a via extending through the supporting substrate.

22. A light emitter device comprising:

an emitter component comprising a heater structure arranged on a membrane structure, wherein the membrane structure is located above a first cavity, wherein the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component, wherein the heater structure is configured to emit light, if a predefined current flows through the heater structure;

a lid substrate having a recess, wherein the lid substrate is attached to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate, and wherein a pressure in the second cavity is less than 100 mbar; and

a wiring structure for providing different voltages to a bias structure of the supporting substrate and to the membrane structure to electrostatically move at least a portion of the membrane structure towards the supporting substrate.

23. A light emitter device comprising:

an emitter component comprising a heater structure arranged on a membrane structure, wherein the membrane structure is located above a first cavity, wherein the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component, wherein the heater structure is configured to emit light, if a predefined current flows through the heater structure; and

a lid substrate having a recess, wherein the lid substrate is attached to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate,

wherein the membrane structure comprises a heat spreader structure,

wherein an insulating layer is located between the heat spreader structure and the heater structure, and

wherein a pressure in the second cavity is less than 100 mbar.

24. The light emitter device of claim 1 , further comprising an optical filter structure located vertically between the second cavity and the lid substrate.

25. The light emitter device of claim 1 , further comprising a wiring structure for providing different voltages to a bias structure of the lid substrate and to the membrane structure to electrostatically move at least a portion of the membrane structure towards the lid substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 2, 2017
From: PINDL, STEPHAN; GLACER, CHRISTOPH
To: INFINEON TECHNOLOGIES AG
Reel/Frame 042214/0593 →
Priority Claims (1)
DE 102017102188.4 · Feb 3, 2017 · national
Continuity (2)
Continuation In Part 15089027 · Apr 1, 2016
Related Publication 20170290097A1 · Oct 5, 2017