Flash memory cells, components, and methods
Flash memory technology is disclosed. In one example, a flash memory component can include a plurality of insulative layers vertically spaced apart from one another. The memory component can also include a vertically oriented conductive channel extending through the plurality of insulative layers. In addition, the memory component can include a charge storage structure disposed between adjacent insulative layers. The charge storage structure can have a vertical cross section with a first side oriented toward the conductive channel and a second side opposite the first side. A length of the first side can be greater than a length of the second side. In another example, the vertical cross-section of the charge storage structure comprises a non-rectangular shape, such as a trapezoid shape. Associated systems and methods are also disclosed.
1. A flash memory component, comprising:
a plurality of insulative layers vertically spaced apart from one another;
a vertically oriented conductive channel extending through the plurality of insulative layers;
a charge storage structure disposed between adjacent insulative layers and having a vertical cross section with a first side oriented toward the conductive channel and a second side opposite the first side, wherein a length of the first side is greater than a length of the second side; and
a control gate positioned between the plurality of insulative layers and lateral to the charge storage structure such that the charge storage structure is between the control gate and the conductive channel, wherein no portion of the control gate extends between the insulative layers and the charge storage structure.
2. The flash memory component of claim 1 , wherein a ratio of the length of the first side to the length of the second side is greater than 1:1.
3. The flash memory component of claim 1 , wherein the length of the first side is greater than or equal to 10 nm.
4. The flash memory component of claim 3 , wherein the length of the first side is less than or equal to 35 nm.
5. The flash memory component of claim 1 , wherein the length of the second side is greater than or equal to 10 nm and less than or equal to 35 nm.
6. The flash memory component of claim 1 , further comprising
a first dielectric layer disposed between the control gate and the charge storage structure, the first dielectric layer having a flank portion that extends toward the conductive channel.
7. The flash memory component of claim 6 , wherein a lateral length of the flank portion is less than or equal to 50% of a distance between the control gate and the conductive channel.
8. The flash memory component of claim 6 , wherein a portion of the charge storage structure is disposed between the flank portion and the conductive channel in a horizontal direction.
9. The flash memory component of claim 6 , wherein the first dielectric layer comprises a nitride material, an oxide material, or a combination thereof.
10. The flash memory component of claim 6 , wherein the first dielectric layer comprises silicon nitride, silicon oxide, or a combination thereof.
11. The flash memory component of claim 6 , further comprising a second dielectric layer disposed between the first dielectric layer and the charge storage structure.
12. The flash memory component of claim 11 , wherein the second dielectric layer comprises an oxide material, an oxynitride material, a high dielectric constant material, or a combination thereof.
13. The flash memory component of claim 11 , wherein the second dielectric layer comprises silicon oxide, silicon oxynitride, HfSiOx, HfOx, AlOx, ZrOx, or a combination thereof.
14. The flash memory component of claim 6 , further comprising a second dielectric layer disposed between the control gate and the first dielectric layer.
15. The flash memory component of claim 14 , wherein the second dielectric layer comprises an oxide material, an oxynitride material, a high dielectric constant material, or a combination thereof.
16. The flash memory component of claim 14 , wherein the second dielectric layer comprises silicon oxide, silicon oxynitride, HfSiOx, HfOx, AlOx, ZrOx, or a combination thereof.
17. The flash memory component of claim 1 , wherein the first side is separated from the adjacent insulative layers by a distance of less than or equal to 32% of the vertical distance between the adjacent insulative layers.
18. The flash memory component of claim 1 , wherein a vertical cross-section of the charge storage structure comprises a non-rectangular shape.
19. The flash memory component of claim 18 , wherein the non-rectangular shape comprises a trapezoidal configuration.
20. The flash memory component of claim 1 , further comprising a dielectric layer disposed between the charge storage structure and the conductive channel.
21. The flash memory component of claim 1 , wherein the charge storage structure is a floating gate or a charge trap.
22. The flash memory component of claim 1 , wherein the plurality of insulative layers comprises an oxide material, an oxynitride material, a nitride material, or a combination thereof.
23. The flash memory component of claim 1 , wherein the conductive channel comprises a polysilicon material, Ge, SiGe, or a combination thereof.