Fabricating Fin-based split-gate high-drain-voltage transistor by work function tuning
A method is presented for creating an asymmetrical split-gate structure. The method includes forming a first device, forming a second device, forming a first gate stack between a first set of spacers of the first device, and a second gate stack between a second set of spacers of the second device. The method further includes depositing a hard mask over the first and second gate stacks, etching a first section of the first gate stack to create a first gap and a second section of the second gate stack to create a second gap, and forming a third gate stack within the first gap of the first gate stack and within the second gap of the second gate stack such that dual gate stacks are defined for each of the first and second devices. The method further includes annealing the dual gate stacks to form replacement metal gate stacks.
1. A structure for creating an asymmetrical split-gate structure, the structure comprising:
a first device formed over a semiconductor substrate, the first device having first source/drain regions formed adjacent a first set of spacers;
a second device formed over the semiconductor substrate, the second device having second source/drain regions formed adjacent a second set of spacers;
a first replacement metal dual gate stacks formed between the first set of spacers of the first device;
a second replacement metal dual gate stacks formed between the second set of spacers of the second device;
wherein the dual replacement gate stacks of the first replacement metal dual gate stacks have different number of layers, and
wherein each gate stack of the first replacement metal dual gate stacks comprises a single conducting layer consisting of titanium nitride (TiN) and lanthanum oxide (La 2 O 3 ).
2. The structure of claim 1 , wherein a work function of the first replacement metal dual gate stacks is different than a work function of the second replacement metal dual gate stacks.
3. The structure of claim 1 , wherein the first device is an n-type field effect transistor (FET) and the second device is a p-type FET.
4. The structure of claim 1 , wherein the first and second replacement metal dual gate stacks include a same number and type of material layers.
5. The structure of claim 1 , wherein an amorphous silicon layer is deposited over each of the first replacement metal gate stack of the first device and the second replacement metal gate stack of the second device.