Resist material and pattern forming method using same

1. A pattern forming method comprising:

providing, on a substrate, a resist material which comprises a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group, a dendrimer with a globular structure having at least two reactive groups for photo-cationic polymerization, and a photo-acid generator as a polymerization initiator;

imprinting a template having concave-convex shape patterns against the resist material;

curing the resist material; and

releasing the template from the cured resist material.

2. The method of claim 1 , wherein the resist material comprises:

50% or more and 90% or less by weight of the diluent monomer;

5% or more and 50% or less by weight of the dendrimer; and

0.3% or more and 10% or less by weight of the polymerization initiator.

3. The method of claim 1 , wherein the dendrimer has a vinyl ether group, an epoxy group or an oxetanyl group as the reactive groups for photo-cationic polymerization.

4. The method of claim 1 , wherein the resist material is provided on an adhesion film on the substrate.

5. The method of claim 1 , wherein the resist material is cured by irradiating the resist material with an ultraviolet ray.