DISPLAY DEVICE
The invention allows formation of LTPS TFTs and TAOS TFTs on the same substrate. The invention provides a display device including a substrate having a display area in which pixels are formed. The pixels include a first TFT made of a TAOS. The drain of the first TFT is formed of first LTPS 112 . The source of the first TFT is formed of second LTPS 113 . The first LTPS 112 is connected to a first electrode 106 via a first through-hole 108 formed in an insulating film 105 covering the first TFT. The second LTPS 113 is connected to a second electrode 107 via a second through-hole 108 formed in the insulating film 105 covering the first TFT.
1 . A display device comprising a substrate having a display area in which pixels are formed, wherein
the pixels include a first TFT made of an oxide semiconductor,
the drain of the first TFT is formed of first polysilicon,
the source of the first TFT is formed of second polysilicon,
the first polysilicon is connected to a first electrode via a first through-hole formed in an insulating film covering the first TFT, and l
the second polysilicon is connected to a second electrode via a second through-hole formed in the insulating film covering the first TFT.
2 . The display device of claim 1 , wherein
the substrate further includes a driver circuit outside the display area, and
the driver circuit includes a second TFT made of polysilicon.
3 . The display device of claim 1 , wherein the first TFT is an n-MOS TFT.
4 . The display device of claim 2 , wherein the second TFTs include an n-MOS TFT and a p-MOS TFT.
5 . The display device of claim 1 , wherein the display area further includes a second TFT made of polysilicon.
6 . The display device of claim 2 , wherein the driver circuit further includes the first TFT.
7 . The display device of claim 1 , wherein the display device is a liquid crystal display device.
8 . The display device of claim 1 , wherein the display device is an organic EL display device.
9 . A display device comprising a substrate having a display area in which pixels are formed, wherein
the pixels include a first TFT made of an oxide semiconductor,
the drain of the first TFT is formed of first polysilicon,
the source of the first TFT is formed of second polysilicon,
the first polysilicon is connected to a first electrode via a first through-hole formed in an insulating film covering the first TFT,
the second polysilicon is connected to a second electrode via a second through-hole formed in the insulating film covering the first TFT, and
a p-n junction is formed between the first polysilicon and the oxide semiconductor or between the second polysilicon and the oxide semiconductor.
10 . The display device of claim 9 wherein the substrate further includes a driver circuit outside the display area, the driver circuit having a second TFT made of polysilicon.
11 . The display device of claim 9 , wherein the first TFT is an n-MOS TFT.
12 . The display device of claim 10 , wherein the second TFT include an n-MOS TFT and a p-MOS TFT.
13 . The display device of claim 9 , wherein the display area further includes the second TFT.
14 . The display device of claim 10 , wherein the driver circuit further includes the first TFT.
15 . The display device of claim 9 , wherein the display device is a liquid crystal display device.
16 . The display device of claim 9 , wherein the display device is an organic EL display device.