Zinc oxide-based mask for selective reactive ion etching
Embodiments herein describe techniques for forming a zinc oxide mask used when performing RIE. In one embodiment, the zinc oxide mask is near-amorphous which means the zinc oxide has a grain size that is less than 50 nanometers. In contrast, metal masks such as aluminum, chromium, and titanium have a less robustness to RIE process. When performing RIE, the edges of these RIE masks can form pits or holes which harm the features of the underlying substrate. However, a near-amorphous zinc oxide RIE mask is less susceptible to pitting, and thus, can improve the geometry of the etched features.
1. A method, comprising:
forming a zinc oxide layer on a first layer of a semiconductor wafer, wherein the zinc oxide layer has a grain size smaller than 50 nanometers;
patterning the zinc oxide layer to form a zinc oxide reactive ion etching (RIE) mask on the first layer; and
performing RIE to selectively remove an unmasked portion of the first layer.
2. The method of claim 1 , wherein forming the zinc oxide layer comprises:
depositing near-amorphous zinc oxide using a deposition process with a temperature less than 150 degrees Celsius.
3. The method of claim 2 , wherein the grain size of the zinc oxide layer formed by the deposition process is less than or equal to 30 nanometers.
4. The method of claim 1 , wherein the zinc oxide RIE mask consists only of zinc oxide.
5. The method of claim 1 , wherein the first layer comprises a silicon material.
6. The method of claim 5 , wherein the first layer comprises one of silicon dioxide and silicon nitride.
7. The method of claim 5 , wherein performing RIE to remove the unmasked portion of the first layer comprises:
generating a plasma; and
while generating the plasma, introducing a fluorine containing gas into a pressurized environment containing the semiconductor wafer to etch the silicon material but not the zinc oxide RIE mask.
8. A method, comprising:
forming a RIE mask on a substrate using a deposition process with a temperature less than or equal to 150 degrees Celsius, wherein the RIE mask comprises near-amorphous zinc oxide; and
performing RIE to remove an unmasked portion of the substrate without removing the RIE mask.
9. The method of claim 8 , wherein the deposition process is one of: atomic layer deposition (ALD), sputtering, so-gel, chemical vapor deposition (CVD), evaporation.
10. The method of claim 9 , wherein the grain size of the near-amorphous zinc oxide is less than 50 nanometers.
11. The method of claim 10 , wherein the grain size of the near-amorphous zinc oxide is less than 30 nanometers.
12. The method of claim 9 , wherein the substrate comprises a silicon material.
13. The method of claim 12 , wherein the substrate comprises a silicon dioxide.
14. The method of claim 12 , wherein performing RIE to remove the unmasked portion of the substrate comprises:
generating a plasma; and
while generating the plasma, introducing a fluorine containing gas into a pressurized environment containing the substrate to etch the silicon material but not the RIE mask.
15. The method of claim 9 , wherein the RIE mask consists only of zinc oxide.