High-electron-mobility transistor and manufacturing method thereof

1. A semiconductor device, comprising:

a substrate;

a semiconductor layer over the substrate, the semiconductor layer comprising a top surface;

a gate structure over the semiconductor layer;

a passivation layer over the gate structure and the semiconductor layer;

a field plate disposed on the passivation layer, comprising a bottom edge; and

a gate electrode over the gate structure, comprising a horizontal portion over the passivation layer and extending over the field plate, the gate electrode being insulated from the field plate,

wherein the gate electrode having a first edge in proximity to the field plate, the field plate comprising a second edge facing the first edge, and the passivation layer being between the first edge and the second edge.

2. The semiconductor device of claim 1 , further comprising a capping layer over the field plate.

3. The semiconductor device of claim 1 , further comprising:

a source over the semiconductor layer;

a drain over the semiconductor layer; and

a contact over the source or the drain, the contact comprising a bottom surface substantially coplanar with the bottom edge of the field plate.

4. The semiconductor device of claim 3 , wherein the source or the drain comprises an identical material as the field plate.

5. The semiconductor device of claim 1 , wherein a vertical distance between the bottom edge and the top surface is about 100 angstroms.

6. The semiconductor device of claim 1 , further comprising:

a source over the semiconductor layer;

a drain over the semiconductor layer; and

a contact over the source or the drain, a bottom surface of the contact being substantially higher than the bottom edge of the field plate, the bottom edge of the field plate being substantially coplanar with a top surface of the passivation layer.

7. The semiconductor device of claim 1 , wherein the bottom edge of the field plate is substantially lower than a top surface of the passivation layer between the field plate and the gate electrode.

8. The semiconductor device of claim 1 , wherein the gate electrode comprises a horizontal portion over the passivation layer and extends over the field plate.

9. A method of manufacturing a semiconductor device, comprising:

providing a substrate;

forming a semiconductor layer over the substrate;

forming a gate structure over the donor-supply layer;

forming a passivation layer over the gate structure and the semiconductor layer;

forming an opening in the passivation layer;

forming a drain by depositing a conductive layer over the passivation layer and within the opening;

patterning the conductive layer to form a field plate in proximity to the gate structure; and

depositing a capping layer covering over the field plate.

10. The method of claim 9 , further comprising forming a gate electrode over the gate structure, the gate electrode comprising a horizontal portion over the capping layer and extending over the field plate.

11. The method of claim 9 , wherein the forming the field plate comprises forming a bottom edge of the field plate over a top surface of the semiconductor layer by a vertical distance of around 100 angstroms.

12. The method of claim 9 , further comprising forming a gate electrode over the gate structure, the gate electrode comprising a first edge and wherein the forming the field plate comprises forming a second edge of the field plate facing the first edge, and the first edge being away from the second edge by a horizontal distance of in a range of from about 0.05 to about 0.5 micrometers.

13. The method of claim 9 , wherein the forming the field plate comprises removing a portion of the passivation layer such that a top surface of the passivation layer is lower than a bottom edge of the field plate.

14. The method of claim 9 , further comprising:

forming a contact over the drain by patterning the conductive layer.

15. The method of claim 14 , wherein the forming the field plate and the forming the contact is performed by patterning the conductive layer such that a top surface of the field plate and a top surface of the contact are substantially coplanar.

16. A method of manufacturing a semiconductor device comprising:

receiving a substrate;

forming a semiconductor layer over the substrate;

forming a gate structure over the semiconductor layer;

forming a passivation layer over the gate structure and the semiconductor layer, a top surface of the passivation layer being above the semiconductor layer by a predetermined height;

forming a first opening in the passivation layer;

forming a drain by blanket depositing a conductive layer over the passivation layer and within the first opening;

forming a field plate on the passivation layer, the field plate being above the semiconductor layer by a height smaller than the predetermined height;

forming an oxide layer covering over the field plate, and

recessing the passivation layer to form a second opening over the gate structure, thereby exposing a top surface of the gate structure.

17. The method of claim 16 , wherein the forming the drain further comprises:

removing a portion of the blanket deposited conductive layer between the drain and the gate structure.

18. The method of claim 17 , wherein the forming the field plate further comprises:

over-etching a portion of the top surface of the passivation layer to form a recess after removing the portion of the conductive layer; and

forming the field plate in the recess.

19. The method of claim 18 , wherein the over-etching a portion of the top surface of the passivation layer to form a recess comprises lowering the top surface of the passivation layer by a range from about 100 to about 200 angstroms.

20. The method of claim 16 , wherein the forming the field plate comprises depositing a conductive material different from a material of the conductive layer, the conductive material comprising titanium nitride, titanium, or aluminum copper.