Memory device and method for fabricating the same
A memory device includes a semiconductor substrate, a first conductive layer, a plurality of second conductive layers, a plurality insulating layers, at least one contact plug and at least one dummy plug. The first conductive layer is disposed on the semiconductor substrate. The insulating layers are disposed on the first conductive layer. The second conductive layers are alternatively stacked with the insulating layers and insulated from the first conductive layer. The contact plug passes through the insulating layers and the second conductive layers, insulates from the second conductive layers and electrically contacts to the first conductive layer. The dummy plug, corresponds to the at least one contact plug, passes through the insulating layers and the second conductive layers, and insulates from the second conductive layers and the first conductive layer.
1. A memory device, comprising:
a semiconductor substrate;
a first conductive layer, disposed on the semiconductor substrate;
a plurality insulating layers, disposed on the first conductive layer;
a plurality of second conductive layers, alternatively stacked with the insulating layers and insulated from the first conductive layer;
at least one contact plug comprising a first conductive material, passing through the insulating layers and the second conductive layers, insulated from the second conductive layers and electrically contacting to the first conductive layer; and
at least one dummy plug, formed in an opening passing through a bottommost layer of the insulating layers and the second conductive layers, corresponding to the at least one contact plug, wherein the at least one dummy plug comprises a dielectric isolation layer formed on a sidewall and a bottom of the opening and a second conductive material fully filling the opening and insulated from the second conductive layers and the first conductive layer.
2. The memory device according to claim 1 , further comprising:
a channel layer, disposed on at least one sidewall of at least one first through opening passing through the insulating layers and the second conductive layers; and
a memory layer, disposed between the channel layer and the second conductive layers.
3. The memory device according to claim 2 , wherein the memory layer comprises an oxide-nitride-oxide (ONO) structure disposed on the sidewall of the first through opening and between the second conductor layers and the channel layer.
4. The memory device according to claim 1 , wherein the at least one dummy plug has a material different from that for configuring the at least one contact plug.
5. The memory device according to claim 1 , wherein the first conductive material is different from the second conductive material.
6. The memory device according to claim 1 , wherein the dielectric isolation layer is disposed between the second conductive material and the second conductive layers.
7. The memory device according to claim 1 , further comprising a dielectric spacer disposed between the at least one contact plug and the second conductive layers.
8. The memory device according to claim 5 , wherein the first conductive material is selected from a group consisting of Ti, W, Al, Cu, Au, Ag, TiN and arbitrary combinations thereof, and
the second conductive material comprises poly-silicon.