Method of producing optoelectronic component with integrated protection diode
A method of producing an optoelectronic component includes providing an optoelectronic semiconductor chip having a first surface on which a first electrical contact and a second electrical contact are arranged; arranging a protection diode on the first contact and the second contact; galvanically growing a first pin on the first electrical contact and a second pin on the second electrical contact; and embedding the first pin, the second pin, and the protection diode in a molded body.
1. A method of producing an optoelectronic component comprising:
providing an optoelectronic semiconductor chip having a first surface on which a first electrical contact and a second electrical contact are arranged;
arranging a protection diode on the first contact and the second contact;
galvanically growing a first pin on the first electrical contact and a second pin on the second electrical contact; and
embedding the first pin, the second pin, and top and bottom surfaces of the protection diode in a molded body,
wherein the protection diode is at least partially embedded in the first pin and the protection diode is at least partially embedded in the second pin.
2. The method according to claim 1 , further comprising:
separating a substrate of the semiconductor chip from an epitaxial layer of the semiconductor chip.
3. The method according to claim 1 , wherein the protection diode is arranged by gluing on the first contact and the second contact.
4. The method according to claim 1 , wherein the protection diode is arranged so that at least one electrical terminal of the protection diode faces toward the first surface.
5. The method according to claim 1 , wherein the protection diode is arranged so that at least one electrical terminal of the protection diode faces away from the first surface.
6. The method according to claim 1 , wherein, before the galvanic growth, a photoresist is arranged and structured on the first surface, and the photoresist is removed after the galvanic growth.
7. The method according to claim 1 , wherein the molded body is created by a molding process.
8. The method according to claim 1 , wherein the semiconductor chip is provided in a wafer composite with at least one further semiconductor chip, and
the semiconductor chip is detached from the wafer composite after the embedding of the first pin, the second pin, and the protection diode in the molded body.
9. The method according to claim 1 , wherein the protection diode is arranged by sintering on the first contact and the second contact.
10. The method according to claim 1 , wherein the protection diode is arranged by soldering on the first contact and the second contact.
11. The method according to claim 1 , wherein a lateral surface of the molded body terminates flush with a lateral surface of the optoelectronic semiconductor chip.
12. The method according to claim 1 , wherein at least one of the first pin and the second pin is laterally enclosed by the molded body.
13. The method according to claim 1 , wherein at least one of the first pin and the second pin terminates flush with the molded body on a side facing away from the optoelectronic semiconductor chip.
14. The method according to claim 1 , wherein the semiconductor chip comprises a substrate on a side of the semiconductor chip facing away from the protection diode and facing away from the at least one of the first pin and the second pin, and the substrate comprises at least one selected from the group consisting of sapphire, SiC, Si, GaAs and Ge.
15. A method of producing an optoelectronic component comprising:
providing an optoelectronic semiconductor chip having a first surface on which a first electrical contact and a second electrical contact are arranged;
arranging a protection diode on the first contact and the second contact;
galvanically growing a first pin on the first electrical contact and a second pin on the second electrical contact; and
embedding the first pin, the second pin, and the protection diode in a molded body,
wherein the protection diode is at least partially embedded in the first pin and the protection diode is at least partially embedded in the second pin, and
a part of the molded body is arranged on a side of the protection diode facing the semiconductor chip and a part of the molded body is arranged on a side of the protection diode facing away from the semiconductor chip.
16. The method according to claim 1 , wherein the first pin and the second pin are a chip carrier for the optoelectronic semiconductor chip.
17. The method according to claim 1 , wherein the first pin and the second pin are externally accessible on the surface of the molded body facing away from the optoelectronic semiconductor chip.
18. A method of producing an optoelectronic component comprising:
providing an optoelectronic semiconductor chip having a first surface on which a first electrical contact and a second electrical contact are arranged;
arranging a protection diode on the first contact and the second contact;
galvanically growing a first pin on the first electrical contact and a second pin on the second electrical contact; and
embedding the first pin, the second pin, and the protection diode in a molded body,
wherein the protection diode is at least partially embedded in the first pin and the protection diode is at least partially embedded in the second pin, and
a part of the molded body is arranged on a side of the protection diode facing the semiconductor chip.