Method of maintaining the state of semiconductor memory having electrically floating body transistor
Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and accessing the cell.
1. An integrated circuit comprising:
an array of semiconductor memory cells formed in a semiconductor substrate having at least one surface, the array comprising:
said semiconductor memory cells arranged in a matrix of rows and columns, wherein each said semiconductor memory cell includes:
a first bipolar device having a first floating base region, a first emitter, and a first collector; and
a second bipolar device having a second floating base region, a second emitter, and a second collector;
wherein said first floating base region is common to said second floating base region,
wherein said first collector is common to said second collector,
wherein a state of said memory cell is maintained through a back-bias applied to said first and second collectors,
wherein said first and second collectors are commonly connected to at least two of said memory cells; and
a control circuit configured to provide electrical signals to said first and second collectors.
2. The integrated circuit of claim 1 , wherein said control circuit provides electrical signals to said first and second collectors to maintain the state of said memory cells connected to said first and second collectors.
3. The integrated circuit of claim 2 , wherein said electrical signals to said first and second collectors are constant voltage biases.
4. The integrated circuit of claim 2 , wherein said electrical signals to said first and second collectors are periodic pulses of voltage.
5. The integrated of claim 2 , wherein said electrical signals to said first and second collectors result in at least two stable states.
6. The integrated circuit of claim 1 , wherein said integrated circuit comprises a fin structure extending from said substrate.
7. An integrated circuit comprising:
an array of semiconductor memory cells formed in a semiconductor substrate having at least one surface, the array comprising:
said semiconductor memory cells arranged in a matrix of rows and columns, wherein each said semiconductor memory cell includes:
a floating body region configured to be charged to a level indicative of a state of the memory cell;
a first region in electrical contact with said floating body region;
a second region in electrical contact with said floating body region and spaced apart from said first region; and
a control circuit configured to provide electrical signals to at least two of said memory cells, wherein said control circuit is commonly connected to at least two of said memory cells, and when a first memory cell of said at least two of said memory cells is in a first state and a second memory cell of said at least two of said memory cells is in a second state, application of electrical signals via said control circuit maintains said first memory cell in said first state and said second memory cell in said second state.
8. The integrated circuit of claim 7 , wherein first control circuit provides electrical signals to said at least two memory cells to maintain the state of said at least two memory cells.
9. The integrated circuit of claim 8 , wherein said electrical signals are constant voltage biases.
10. The integrated circuit of claim 8 , wherein said electrical signals are periodic pulses of voltage.
11. The integrated of claim 8 , wherein said electrical signals result in at least two stable states.
12. The integrated circuit of claim 7 , wherein said integrated circuit comprises a fin structure extending from said substrate.
13. An integrated circuit comprising:
an array of semiconductor memory cells formed in a semiconductor substrate having at least one surface, the array comprising:
said semiconductor memory cells arranged in a matrix of rows and columns, wherein each said semiconductor memory cell includes:
a first bipolar device having a first floating base region, a first emitter, and a first collector; and
a second bipolar device having a second floating base region, a second emitter, and a second collector;
wherein said first floating base region is common to said second floating base region;
wherein said first collector is common to said second collector;
wherein a state of said memory cell is maintained through a back-bias applied to said first and second collectors; and
wherein said first and second collectors are commonly connected to at least two of said memory cells;
a first control circuit configured to provide electrical signals to said first and second collectors to maintain a state of said memory cell;
a second control circuit configured to perform read operations of said memory cell; and
wherein states of said memory cells are maintained upon repeated read operations.
14. The integrated circuit of claim 13 , wherein said first control circuit provides electrical signals to said first and second collectors to maintain the state of said memory cells connected to said first and second collectors.
15. The integrated circuit of claim 14 , wherein said electrical signals to said first and second collectors are constant voltage biases.
16. The integrated circuit of claim 14 , wherein said electrical signals to said first and second collectors are periodic pulses of voltage.
17. The integrated of claim 14 , wherein said electrical signals to said first and second collectors result in at least two stable states.
18. The integrated circuit of claim 13 , wherein said integrated circuit comprises a fin structure extending from said substrate.