Semiconductor device processing method for material removal
A method of removing at least a portion of a layer of material from over a semiconductor substrate that can include dispensing an etching solution over the semiconductor substrate to form a pool of etching solution on the layer of material, wherein a footprint of the pool of etching solution is less than a footprint of the semiconductor substrate. The pool of etching solution and the semiconductor substrate can be moved with respect to each other. A pool boundary of the pool of etching solution can be defined on the semiconductor substrate with at least one air-knife such that the pool of etching solution etches the layer of material over the semiconductor substrate within the footprint of the pool of etching solution. The etching solution and at least a portion of the layer of material etched by the etching solution can be removed with the at least one air-knife.
1. A system for removing material from a substrate, comprising:
a conveyor comprising rollers configured to contact the substrate and advance the substrate by friction between moving rollers and the substrate;
a first blower disposed over the conveyor, the first blower forming a first air-knife comprising a width Wa 1 in a range of 1-20 millimeters (mm), a length La 1 greater than 200 mm;
a second blower disposed over the conveyor and offset from the first blower by a distance D that is less than a length Ls of the substrate and is less than 300 mm, the second blower forming a second air-knife comprising a width Wa 2 in a range of 1-20 mm and a length La 2 greater than 200 mm; and
an etching solution dispenser disposed over the conveyor and between the first blower or first air-knife and the second blower or second air-knife, the etching solution dispenser adapted for dispensing an etching solution onto the substrate on the conveyor within an etching area A defined as an area with a length equal to distance D and a width greater than 200 mm;
wherein the system for removing material from the substrate is without a bath and without a bowl for applying the etching solution to the substrate.
2. The system of claim 1 , wherein:
the first air-knife flows at a rate greater than or equal to 0.1 meters per second (m/s); and
the second air-knife flows at a rate greater than or equal to 0.1 m/s.
3. The system of claim 1 , wherein a width of the conveyor Wc comprises a distance greater than 200 mm.
4. The system of claim 1 , wherein the first air-knife and the second air-knife move relative to the conveyor at a rate in a range of 50-100 mm per minute.
5. The system of claim 1 , further comprising a tank disposed below the conveyer, the tank adapted for collecting etching solution.
6. A method of using the system of claim 1 , wherein the substrate advanced by the conveyor to pass below the first air-knife and the second air-knife comprises a native semiconductor wafer, a reconstituted semiconductor wafer, a panel, a fan-out wafer or panel, an embedded die panel, a chip carrier substrate, a printed circuit board (PCB), or a printed wiring panel.
7. A system for removing material from a substrate, comprising:
a conveyor configured to support the substrate;
a first blower disposed over the conveyor, the first blower forming a first air-knife comprising a width Wa 1 in a range of 1-20 millimeters (mm);
a second blower disposed over the conveyor and offset from the first blower by a distance D that is less than a length Ls of the substrate and is less than 300 mm, the second blower forming a second air-knife comprising a width Wa 2 in a range of 1-20 mm; and
an etching solution dispenser configured to dispense an etching solution onto the substrate within an etching area, the etching area comprising a length equal to the distance D;
wherein the system is adapted to move the conveyor with respect to one or more of the first blower and the second blower, or to move one or more of the first blower and the second blower with respect to the conveyor.
8. The system of claim 7 , wherein the etching solution dispenser is disposed over the conveyor and offset from the first blower and the second blower.
9. The system of claim 7 , wherein a length of the air-knife La comprises a distance substantially equal to the width of the conveyor Wc.
10. The system of claim 7 , wherein:
the first air-knife flows at a rate greater than or equal to 0.1 meters per second (m/s); and
the second air-knife flows at a rate greater than or equal to 0.1 m/s.
11. The system of claim 7 , wherein the system is without a bath and without a bowl for applying the etching solution to the substrate.
12. The system of claim 7 , wherein one or more of the first air-knife and the second air-knife move relative to the conveyor at a rate in a range of 50-100 mm per minute.
13. The system of claim 7 , further comprising a tank disposed below the conveyer, the tank adapted for collecting etching solution.
14. A system for removing material from a substrate, comprising:
a conveyor;
a first air-knife disposed over the conveyor;
a second air-knife disposed over the conveyor and offset from the first air-knife by a distance D that is less than a length Ls of the substrate; and
an etching solution dispenser adapted for dispensing an etching solution onto the substrate within an etching area A;
wherein the system is adapted to move the conveyor with respect to one or more of the first air-knife and the second air-knife, or to move one or more of the first air-knife and the second air-knife with respect to the conveyor.
15. The system of claim 14 , wherein the etching solution dispenser is disposed over the conveyor and between the first air-knife and the second air-knife.
16. The system of claim 14 , wherein a length La of the first air-knife and the second air-knife comprises a distance substantially greater than 200 millimeters (m).
17. The system of claim 14 , wherein:
the first air-knife flows at a rate greater than or equal to 0.1 meters per second (m/s); and
the second air-knife flows at a rate greater than or equal to 0.1 m/s.
18. The system of claim 14 , wherein:
the first air-knife comprises a width Wa 1 in a range of 1-20 mm; and
the second air-knife comprises a width Wa 1 in a range of 1-20 mm.
19. The system of claim 14 , wherein one or more of the first air-knife and the second air-knife move relative to the conveyor at a rate in a range of 50-100 mm per minute.
20. The system of claim 14 , further comprising a tank adapted for collecting etching solution.