Dummy conductive structures for EMI shielding
A semiconductor device has a first conductive layer and a second conductive layer. A first portion of the first conductive layer is aligned with a first portion of the second conductive layer. An insulating layer is deposited over the first conductive layer and second conductive layer. A third conductive layer includes a first portion of the third conductive layer vertically aligned with the first portion of the first conductive layer and the first portion of the second conductive layer. An electrical component is disposed over the first conductive layer and second conductive layer. An encapsulant is deposited over the first conductive layer, second conductive layer, and electrical component. A cut is made through the encapsulant, first conductive layer, and second conductive layer. A fourth conductive layer is deposited over side surfaces of the first conductive layer, second conductive layer, and encapsulant.
1. A method of making a semiconductor device, comprising:
forming a first conductive layer;
forming a conductive pillar over the first conductive layer;
forming a second conductive layer, wherein a first portion of the first conductive layer is vertically aligned with a first portion of the second conductive layer and the conductive pillar;
depositing an encapsulant over the first conductive layer, conductive pillar, and second conductive layer;
cutting through the encapsulant, the first portion of the first conductive layer, the conductive pillar, and the first portion of the second conductive layer; and
depositing a third conductive layer contacting side surfaces of the first conductive layer, conductive pillar, second conductive layer, and encapsulant.
2. The method of claim 1 , further including:
forming the first conductive layer to include a second portion separate from the first portion; and
forming the second conductive layer to include a second portion connecting the first portion of the second conductive layer to the second portion of the first conductive layer.
3. The method of claim 2 , further including disposing a conductive bump on the second portion of the first conductive layer, wherein the conductive bump is electrically connected to the first portion of the first conductive layer through the second conductive layer.
4. The method of claim 1 , further including:
disposing a conductive bump on the first portion of the first conductive layer; and
mounting the semiconductor device to a substrate using the conductive bump.
5. The method of claim 1 , further including:
disposing an electrical component over the first conductive layer and second conductive layer; and
depositing the encapsulant over the electrical component.
6. The method of claim 1 , further including:
forming an insulating layer over the first conductive layer and second conductive layer; and
forming a fourth conductive layer including a first portion of the fourth conductive layer vertically aligned with the first portion of the first conductive layer and the first portion of the second conductive layer.
7. The method of claim 1 , further including disposing a conductive bump on the first conductive layer.
8. The method of claim 7 , further including mounting the semiconductor device to a substrate using the conductive bump.
9. A method of making a semiconductor die, comprising:
forming a first conductive layer;
forming a conductive pillar on the first conductive layer;
forming a second conductive layer on the conductive pillar;
cutting through the first conductive layer, conductive pillar and second conductive layer; and
depositing a third conductive layer over side surfaces of the first conductive layer and second conductive layer.
10. The method of claim 9 , further including forming the second conductive layer to include a conductive trace connecting first and second portions of the first conductive layer.
11. The method of claim 10 , further including disposing a conductive bump on the second portion of the first conductive layer.
12. The method of claim 9 , further including disposing a conductive bump on the first conductive layer.
13. The method of claim 9 , further including disposing an electrical component over the first conductive layer and second conductive layer.
14. The method of claim 9 , further including:
forming an insulating layer around the first conductive layer and second conductive layer; and
forming a fourth conductive layer vertically aligned with the first conductive layer and second conductive layer.
15. A method of making a semiconductor device, comprising:
forming a first conductive layer;
forming a conductive pillar over the first conductive layer
forming a second conductive layer over the conductive pillar and first conductive layer; and
forming a third conductive layer contacting side surfaces of the first conductive layer, conductive pillar, and second conductive layer.
16. The method of claim 15 , further including:
depositing an encapsulant over the first conductive layer and second conductive layer; and
forming the third conductive layer over a side surface of the encapsulant.
17. The method of claim 16 , further including disposing an electrical component over the second conductive layer in the encapsulant.
18. The method of claim 15 , further including forming the second conductive layer to include a conductive trace connecting two portions of the first conductive layer.
19. The method of claim 15 , further including forming a bump on the first conductive layer.
20. The method of claim 15 , further including:
forming a substrate comprising a plurality of insulating layers and a plurality of conductive layers, wherein the plurality of conductive layers includes the first conductive layer, second conductive layer, and conductive pillar; and
singulating the substrate through the conductive pillar, wherein the plurality of conductive layers occupies an entire height of the substrate within a footprint of the conductive pillar.