Semiconductor component and method of manufacture

1. A semiconductor component, comprising:

a semiconductor material;

a nucleation layer on the semiconductor material;

a first portion of a buffer layer on the nucleation layer;

an electric field stop layer on the first portion of the buffer layer;

a plurality of layers of compound semiconductor material over the electric field stop layer, wherein the plurality of layers of compound semiconductor material over the electric field stop layer comprise a second portion of the buffer layer on the electric field stop layer, wherein a doping concentration of the electric field stop layer is higher than a doping concentration of the second portion of the buffer layer;

first and second filled trenches extending into the plurality of layers of compound semiconductor material, wherein the first trench includes first and second sidewalls and a floor and a first dielectric liner over the first and second sidewalls of the first trench and wherein the second trench includes first and second sidewalls and a floor and a second dielectric liner over the first and second sidewalls of the second trench; and

a source electrode, a drain electrode, and a gate electrode over the plurality of layers of compound semiconductor material.

2. The semiconductor component of claim 1 , wherein the second dielectric liner is over the floor of the second trench and wherein a trench fill material comprises an electrically conductive material, and wherein the electrically conductive material in the first trench contacts the semiconductor material.

3. The semiconductor component of claim 1 , wherein the first portion of the buffer layer comprises a graded superlattice.

4. The semiconductor component of claim 1 , further including an electrically conductive material in the first trench and the second trench.

5. The semiconductor component of claim 4 , wherein the first dielectric liner is over the floor of the first trench, the second dielectric liner is absent from the floor of the second trench, and the electrically conductive material in the second trench contacts the semiconductor material.

6. A semiconductor component, comprising:

a semiconductor material having a surface;

a nucleation layer on the semiconductor material;

a first portion of a buffer layer on the nucleation layer;

an electric field stop layer on the first portion of the buffer layer;

a second portion of the buffer layer on the electric field stop layer, wherein the first portion of the buffer layer comprises a graded superlattice and a doping concentration of the electric field stop layer is higher than a doping concentration of the second portion of the buffer layer;

a plurality of trenches extending through the second portion of the buffer layer, through the electric field stop layer, through the first portion of the buffer layer, and into the semiconductor material, wherein each trench has a floor and opposing sidewalls;

a layer of insulating material on at least the opposing sidewalls of a first trench of the plurality of trenches, and on the opposing sidewalls of a second trench of the plurality of trenches; and

a trench fill material in the first trench and in the second trench.

7. The semiconductor component of claim 6 , wherein the layer of insulating material in the second trench of the plurality of trenches is over the floor of the second trench, the electrically conductive material in the first trench contacts the semiconductor material and the electrically conductive material in the second trench is electrically isolated from the semiconductor material.

8. The semiconductor component of claim 6 , wherein the layer of insulating material is on the floor of the first trench and on the floor of the second trench.

9. The semiconductor component of claim 6 , further including a channel layer on the second portion of the buffer layer, a strained layer on the channel layer, and a control electrode and first and second current carrying electrodes over the strained layer and an electrical interconnect between one of the first carrying electrode or the second current carrying electrode and the trench fill material in the first trench.

10. A semiconductor component, comprising:

a semiconductor material;

a nucleation layer on the semiconductor material;

a first portion of a buffer layer on the nucleation layer;

an electric field stop layer on the first portion of the buffer layer, the electric field stop layer having a higher concentration of impurity material than an impurity material concentration of a second portion of the buffer layer;

at least one layer of compound semiconductor material over the first portion of the buffer layer wherein the at least one layer of compound semiconductor material comprises the second portion of the buffer layer;

a first trench extending into a portion of the at least one layer of compound semiconductor material; and

a source electrode, a drain electrode, and a gate electrode over the plurality of layers of semiconductor material.

11. The semiconductor component of claim 10 , wherein the second portion of the buffer layer is on the electric field stop layer.

12. The semiconductor component of claim 10 , further including:

a first isolation structure extending through another portion of the at least one layer of compound semiconductor material into the semiconductor material.

13. The semiconductor component of claim 11 , wherein at least one of the first portion of the buffer layer or the second portion of the buffer layer comprises a graded superlattice.

14. The semiconductor component of claim 10 , wherein the electric field stop layer has a first doping concentration and the first portion of the buffer layer has a second doping concentration, the first doping concentration greater than the second doping concentration.

15. The semiconductor component of claim 10 , further including:

a second trench extending into another portion of the at least one layer of compound semiconductor material;

a third trench extending through the electric field stop layer, the third trench having first and second sidewalls;

a first isolation structure extending from the first trench into the semiconductor material;

a second isolation structure extending from the second trench into the semiconductor material;

a dielectric liner on the first and second sidewalls of the third trench, wherein the dielectric liner is absent from a first portion of the first sidewall and a first portion of the second sidewall adjacent a portion of plurality of the layers of compound semiconductor material over the electric field stop layer and from a floor of the third trench; and

an electrically conductive material in the third trench, wherein one of the source electrode or the drain electrode contacts the electrically conductive material in the third trench.

16. A semiconductor component, comprising:

a semiconductor material;

a nucleation layer on the semiconductor material;

a first portion of a buffer layer on the nucleation layer;

an electric field stop layer on the first portion of the buffer layer, the electric field stop layer having a dopant concentration that is greater than a dopant concentration of the first portion of the buffer layer;

a second portion of the buffer layer on the electric field stop layer;

a plurality of layers of compound semiconductor material over the electric field stop layer;

a first trench extending into a first portion of at least one of the plurality of layers of compound semiconductor material, the first trench having a floor and sidewalls;

a second trench extending into a second portion of at least one of the plurality of layers of compound semiconductor material, the second trench having a floor and sidewalls;

a first isolation structure extending from the floor of the first trench into a third portion of at least one of the plurality of layers of semiconductor material; and

a second isolation structure extending from the floor of the second trench into a third portion of at least one of the plurality of layers of semiconductor material.

17. The semiconductor component of claim 16 , wherein the plurality of layers of compound semiconductor material over the electric field stop layer comprises a channel layer over the second portion of the buffer layer and a strained layer over the channel layer.

18. The semiconductor component of claim 16 , further including:

a third trench extending into the electric field stop layer, the third trench having first and second sidewalls and a floor;

a first dielectric liner on the first sidewall, wherein the first dielectric liner is absent from a first portion of the first sidewall adjacent a first portion of the strained layer and a second portion of the first sidewall adjacent a first portion of the channel layer;

a second dielectric liner on the second sidewall, wherein the second dielectric liner is absent from a first portion of the second sidewall adjacent a second portion of the strained layer and a second portion of the second sidewall adjacent a second portion of the channel layer; and

an electrically conductive material in the third trench, wherein the electrically conductive material contacts the first portion of the strained layer and the first portion of the channel layer from which the first dielectric liner and the second dielectric liner are absent, and the electrically conductive material contacts a portion of the electric field stop layer.

19. The semiconductor component of claim 18 , further including one of a source electrode or a drain electrode on the electrically conductive material in the third trench.

20. The semiconductor component of claim 16 , wherein the plurality of layers of compound semiconductor material over the electric field stop layer comprises a channel layer over the buffer layer and a strained layer over the channel layer.

21. The semiconductor component of claim 16 , further including:

a third trench extending into the semiconductor material, the third trench having first and second sidewalls and a floor;

a first dielectric liner on portions of the first sidewall, wherein the first dielectric liner is absent from a portion of the first sidewall adjacent the strained layer, a portion of the first sidewall adjacent a first portion of the channel layer, and a portion of the first sidewall adjacent the electric field stop layer;

a second dielectric liner on portions of the second sidewall, wherein the second dielectric liner is absent from a portion of the second sidewall adjacent the strained layer, a portion of the second sidewall adjacent a first portion of the channel layer, and a portion of the second sidewall adjacent the electric field stop layer; and

an electrically conductive material in the third trench, wherein the electrically conductive material contacts the portions of the strained layer, the portions of the channel layer, the portions of the electric field stop layer from which the first dielectric liner and the second dielectric liner are absent, and the electrically conductive material contacts a portion of the semiconductor material.

22. The semiconductor component of claim 21 , further including one of a source electrode or a drain electrode on the electrically conductive material in the third trench.

23. The semiconductor component of claim 16 , wherein the first isolation structure and the second isolation structure comprise an implanted impurity material, wherein the impurity material is one of nitrogen or helium.