Metal-compound-removing solvent and method in lithography
A wafer is rinsed with a solvent. The wafer has an increased hydrophobicity as a result of being rinsed with the solvent. A metal-containing material is formed over the wafer after the wafer has been rinsed with the solvent. One or more lithography processes are performed at least in part using the metal-containing material. The metal-containing material is removed during or after the performing of the one or more lithography processes. The increased hydrophobicity of the wafer facilitates a removal of the metal-containing material.
1. A method of fabricating a semiconductor device, comprising:
rinsing a wafer with a solvent that contains a carbon fluoride material, wherein the wafer has an increased hydrophobicity as a result of being rinsed with the solvent;
forming a metal-containing material over the wafer after the wafer has been rinsed with the solvent;
performing one or more lithography processes at least in part using the metal-containing material; and
removing the metal-containing material during or after the performing of the one or more lithography processes, wherein the increased hydrophobicity of the wafer facilitates a removal of the metal-containing material;
wherein the carbon fluoride material includes one of the following chemical formulas:
2. The method of claim 1 , wherein the rinsing comprises configuring a contact angle of the solvent with respect to water.
3. The method of claim 2 , wherein the configuring the contact angle comprises including an additive as a part of the solvent, the additive having a contact angle that exceeds 75 degrees with respect to water.
4. The method of claim 1 , wherein the forming the metal-containing material comprises forming a photoresist as the metal-containing material.
5. The method of claim 4 , wherein:
the forming the photoresist comprises coating an extreme ultraviolet (EUV) photoresist; and
wherein the performing the one or more lithography processes comprises performing one or more EUV lithography processes.
6. The method of claim 5 , wherein the coating of the EUV photoresist comprises coating the EUV resist that contains: Caesium (Cs), Barium (Ba), Lanthanum (La), Indium (In), Cerium (Ce), Silver (Ag), or Tin (Sn).
7. The method of claim 1 , wherein the removing of the metal-containing material is performed at least in part using a cleaning fluid that has Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30.
8. The method of claim 7 , wherein the cleaning fluid has Hansen solubility parameters of delta D in a range between 15 and 22, delta P in a range between 3.5 and 17, and delta H in a range between 5 and 16.
9. The method of claim 1 , wherein the removing of the metal-containing material comprises using a pressure-delivery system to remove the metal-containing material from the wafer.
10. A method of fabricating a semiconductor device, comprising:
applying a solvent that includes carbon fluoride to a wafer, wherein an application of the solvent makes the wafer more hydrophobic, and wherein the carbon fluoride has a chemical formula that is selected from the group consisting of:
forming a metal-containing photoresist layer over the wafer after an application of the solvent;
patterning the metal-containing photoresist layer using an extreme ultraviolet (EUV) lithography process; and
removing the metal-containing photoresist layer.
11. The method of claim 10 , wherein the carbon fluoride has a contact angle that exceeds 75 degrees with respect to water.
12. The method of claim 10 , wherein the forming the metal-containing photoresist layer comprises coating an EUV photoresist that contains: Caesium (Cs), Barium (B a), Lanthanum (La), Indium (In), Cerium (Ce), Silver (Ag), or Tin (Sn).
13. The method of claim 10 , wherein the removing of the metal-containing photoresist layer is performed at least in part using a cleaning fluid that has Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30.
14. The method of claim 13 , wherein the cleaning fluid has Hansen solubility parameters of delta D in a range between 15 and 22, delta P in a range between 3.5 and 17, and delta H in a range between 5 and 16.
15. The method of claim 10 , wherein the removing the metal-containing photoresist layer comprises using a pressure-delivery system to remove the metal-containing photoresist layer from the wafer.
16. A method of fabricating a semiconductor device, comprising:
increasing a hydrophobicity of a wafer by applying a first solvent, wherein the first solvent contains a material that has one of the following chemical formulas:
coating a photoresist layer over the wafer after the first solvent has been applied, wherein the photoresist layer is configured for extreme ultraviolet (EUV) lithography and contains: Caesium (Cs), Barium (Ba), Lanthanum (La), Indium (In), Cerium (Ce), Silver (Ag), or Tin (Sn);
patterning the photoresist layer using an EUV lithography process; and
cleaning the wafer with a second solvent after the EUV lithography process has been at least partially performed, wherein an increased hydrophobicity of the wafer facilitates the cleaning of the wafer, and wherein the second solvent has Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30.
17. The method of claim 16 , wherein the second solvent contains a metal chelate.
18. The method of claim 16 , further comprising:
heating the second solvent.
19. The method of claim 16 , wherein the second solvent has Hansen solubility parameters of delta D in a range between 15 and 22, delta P in a range between 3.5 and 17, and delta H in a range between 5 and 16.
20. The method of claim 16 , further comprising: using a pressure-delivery system to remove materials that contain Cs, Ba, La, In, Ce, Ag, or Sn from the wafer.