Semiconductor device and method for manufacturing semiconductor device
Provided is a semiconductor device having favorable reliability. A manufacturing method of a semiconductor device comprising the steps of: forming a first oxide semiconductor having an island shape; forming a first conductor and a second conductor over the first oxide semiconductor; forming an oxide semiconductor film over the first oxide semiconductor, the first conductor, and the second conductor; forming a first insulating film over the oxide semiconductor film; forming a conductive film over the first insulating film; removing part of the first insulating film and part of the conductive film to form a first insulator and a third conductor; forming a second insulating film covering the first insulator and the third conductor; removing part of the oxide semiconductor film and part of the second insulating film to form a second oxide semiconductor and a second insulator and to expose a side surface of the first oxide semiconductor; forming a third insulator in contact with the side surface of the first oxide semiconductor and with a side surface of the second oxide semiconductor; forming a fourth insulator in contact with the third insulator; and performing a microwave-excited plasma treatment to the third insulator and the fourth insulator.
1. A manufacturing method of a semiconductor device comprising the steps of:
forming a first oxide semiconductor having an island shape;
forming a first conductor and a second conductor over the first oxide semiconductor;
forming an oxide semiconductor film over the first oxide semiconductor, the first conductor, and the second conductor;
forming a first insulating film over the oxide semiconductor film;
forming a conductive film over the first insulating film;
removing part of the first insulating film and part of the conductive film to form a first insulator and a third conductor;
forming a second insulating film covering the first insulator and the third conductor;
removing part of the oxide semiconductor film and part of the second insulating film to form a second oxide semiconductor and a second insulator and to expose a side surface of the first oxide semiconductor;
forming a third insulator in contact with the side surface of the first oxide semiconductor and with a side surface of the second oxide semiconductor;
forming a fourth insulator in contact with the third insulator; and
performing a microwave-excited plasma treatment to the third insulator and the fourth insulator.
2. The manufacturing method of a semiconductor device, according to claim 1 ,
wherein the third insulator comprises aluminum oxide.
3. The manufacturing method of a semiconductor device, according to claim 1 ,
wherein the third insulator comprises aluminum oxide and is formed by a sputtering method at a substrate temperature higher than or equal to 120° C. and lower than or equal to 150° C.
4. The manufacturing method of a semiconductor device, according to claim 1 ,
wherein in the step of forming the third insulator, heat treatment is performed in a deposition apparatus at a temperature higher than or equal to 100° C., and then the third insulator is formed in the deposition apparatus without exposure to outside air.
5. The manufacturing method of a semiconductor device, according to claim 1 ,
wherein the fourth insulator comprises aluminum oxide.
6. The manufacturing method of a semiconductor device, according to claim 1 ,
wherein the fourth insulator comprises aluminum oxide and is formed by an atomic layer deposition method.
7. A manufacturing method of a semiconductor device, comprising the steps of:
forming a first oxide semiconductor having an island shape;
forming a first conductor and a second conductor over the first oxide semiconductor;
forming an oxide semiconductor film over the first oxide semiconductor, the first conductor, and the second conductor;
forming a first insulating film over the oxide semiconductor film;
forming a conductive film over the first insulating film;
removing part of the first insulating film and part of the conductive film to form a first insulator and a third conductor;
forming a second insulating film covering the oxide semiconductor film, the first insulator, and the third conductor;
performing a first microwave-excited plasma treatment to the second insulating film;
removing part of the oxide semiconductor film and part of the second insulating film to form a second oxide semiconductor and a second insulator and to expose a side surface of the first oxide semiconductor;
forming a third insulator in contact with the side surface of the first oxide semiconductor and with a side surface of the second oxide semiconductor;
forming a fourth insulator in contact with the third insulator; and
performing a second microwave-excited plasma treatment to the third insulator and the fourth insulator.
8. The manufacturing method of a semiconductor device, according to claim 7 ,
wherein the third insulator comprises aluminum oxide.
9. The manufacturing method of a semiconductor device, according to claim 7 ,
wherein the third insulator comprises aluminum oxide and is formed by a sputtering method at a substrate temperature higher than or equal to 120° C. and lower than or equal to 150° C.
10. The manufacturing method of a semiconductor device, according to claim 7 ,
wherein in the step of forming the third insulator, heat treatment is performed in a deposition apparatus at a temperature higher than or equal to 100° C., and then the third insulator is formed in the deposition apparatus without exposure to outside air.
11. The manufacturing method of a semiconductor device, according to claim 7 ,
wherein the fourth insulator comprises aluminum oxide.
12. The manufacturing method of a semiconductor device, according to claim 7 ,
wherein the fourth insulator comprises aluminum oxide and is formed by an atomic layer deposition method.
13. A manufacturing method of a semiconductor device comprising the steps of:
forming a first oxide semiconductor having an island shape;
forming a first conductor and a second conductor over the first oxide semiconductor;
forming an oxide semiconductor film over the first oxide semiconductor, the first conductor, and the second conductor;
forming a first insulating film over the oxide semiconductor film;
forming a conductive film over the first insulating film;
removing part of the conductive film to form a third conductor;
forming a second insulating film covering the oxide semiconductor film, and the third conductor;
removing part of the oxide semiconductor film, part of the first insulating film, and part of the second insulating film to form a second oxide semiconductor, a first insulator, and a second insulator and to expose a side surface of the first oxide semiconductor;
forming a third insulator in contact with the side surface of the first oxide semiconductor, the first insulator, and a side surface of the second oxide semiconductor;
forming a fourth insulator in contact with the third insulator; and
performing a microwave-excited plasma treatment to the third insulator and the fourth insulator.
14. The manufacturing method of a semiconductor device, according to claim 13 ,
wherein the third insulator comprises aluminum oxide.
15. The manufacturing method of a semiconductor device, according to claim 13 ,
wherein the third insulator comprises aluminum oxide and is formed by a sputtering method at a substrate temperature higher than or equal to 120° C. and lower than or equal to 150° C.
16. The manufacturing method of a semiconductor device, according to claim 13 ,
wherein in the step of forming the third insulator, heat treatment is performed in a deposition apparatus at a temperature higher than or equal to 100° C., and then the third insulator is formed in the deposition apparatus without exposure to outside air.
17. The manufacturing method of a semiconductor device, according to claim 13 ,
wherein the fourth insulator comprises aluminum oxide.
18. The manufacturing method of a semiconductor device, according to claim 13 ,
wherein the fourth insulator comprises aluminum oxide and is formed by an atomic layer deposition method.
19. A manufacturing method of a semiconductor device comprising the steps of:
forming a first oxide semiconductor having an island shape;
forming a first conductor and a second conductor over the first oxide semiconductor;
forming an oxide semiconductor film over the first oxide semiconductor, the first conductor, and the second conductor;
forming a first insulating film over the oxide semiconductor film;
forming a conductive film over the first insulating film;
removing part of the conductive film to form a third conductor;
forming a second insulating film covering the first insulating film and the third conductor;
performing a first microwave-excited plasma treatment;
removing part of the oxide semiconductor film, part of the first insulating film, and part of the second insulating film to form a second oxide semiconductor, a first insulator, and a second insulator and to expose a side surface of the first oxide semiconductor;
forming a third insulator in contact with the side surface of the first oxide semiconductor, the first insulator, and a side surface of the second oxide semiconductor;
forming a fourth insulator in contact with the third insulator; and
performing a second microwave-excited plasma treatment to the third insulator and the fourth insulator.
20. The manufacturing method of a semiconductor device, according to claim 19 ,
wherein the third insulator comprises aluminum oxide.
21. The manufacturing method of a semiconductor device, according to claim 19 ,
wherein the third insulator comprises aluminum oxide and is formed by a sputtering method at a substrate temperature higher than or equal to 120° C. and lower than or equal to 150° C.
22. The manufacturing method of a semiconductor device, according to claim 19 ,
wherein in the step of forming the third insulator, heat treatment is performed in a deposition apparatus at a temperature higher than or equal to 100° C., and then the third insulator is formed in the deposition apparatus without exposure to outside air.
23. The manufacturing method of a semiconductor device, according to claim 19 ,
wherein the fourth insulator comprises aluminum oxide.
24. The manufacturing method of a semiconductor device, according to claim 19 ,
wherein the fourth insulator comprises aluminum oxide and is formed by an atomic layer deposition method.