Multi-access memory system and a method to manufacture the system
A multiple memory access system is disclosed. The system includes a first die disposed on a package substrate. A second die is stacked above the first die. The first die, the second die and the package substrate form a first package. An IC is placed within a close proximity of the first package where the first die communicates with the second die at a first data rate while the first die communicates with the IC at a second data rate. The first data rate is higher than the second data rate. Methods of forming a multi-access memory system are also disclosed.
1. A method for forming a multi-access memory system comprising a first package that includes a first die, a second die, and a package substrate, the method comprising:
forming first and second pads on a surface of the first die;
forming electrical surface routings that are disposed only along the surface of the first die, wherein each of the electrical surface routings is the only electrical connection between one of the first pads and one of the second pads;
placing the first die on the package substrate;
stacking the second die on the first die, wherein the first die is operable to communicate with the second die via the first pads, the electrical surface routings, the second pads, and a plurality of bumps or balls each physically contacting the second die and one of the second pads, and wherein the second die is of smaller size than the first die; and
interconnecting the first die to the package substrate.
2. The method in claim 1 further comprising:
coupling the first package with a second package.
3. The method in claim 2 , wherein the first die and second package comprise memory chips.
4. The method in claim 3 , wherein a memory size of the second die is larger than a memory size of the second package.
5. The method in claim 2 , wherein the first die is operable to communicate with the second die at a first data rate, the first die is operable to communicate with the second package at a second data rate, and the first data rate is greater than the second data rate.
6. The method in claim 1 further comprising:
coupling the first die and the package substrate through wire bonds.
7. The method of claim 1 , wherein the first die is one of a programmable logic device or a microprocessor.
8. The method of claim 2 , wherein the second package comprises an integrated circuit.
9. The method of claim 1 , wherein the first pads are coupled to an unbounded Input/Output within the first die.
10. The method of claim 3 , wherein a memory size of the memory chip of the first die is equivalent to a memory size of the memory chip in the second package.
11. The method of claim 3 , wherein a memory size of the memory chip of the first die is larger than a memory size of the memory chip in the second package.
12. The method of claim 1 , wherein the first pads are wire-bond pads and the second pads are micro-bump pads.
13. The method of claim 1 , wherein package traces are embedded within the package substrate, and wherein the package traces are coupled to route signals from the first die to a circuit board via interconnections.
14. The method of claim 1 , wherein the first pads are coupled to input/outputs or power buffers of the first die.
15. The method of claim 1 , wherein the plurality of bumps or balls are made of conductive material.