Top-emitting WOLED display device
Disclosed is a top-emitting WOLED display device. An optical turning layer with a uniform thickness is added between anode layers of three sub-pixels R, G and B and a reflective metal layer of the display device. Because of arrangement of the optical turning layer, a distance between a WOLED layer and a reflective metal layer is increased. Thus, a total cavity length of a white OLED is increased, and a microcavity effect of a top-emitting WOLED is overcome. The optical turning layer is suitable for manufacture of AMOLED display devices with high-resolution and color gamut.
1. A top-emitting WOLED display device, comprising: a reflective metal layer, anode layer of three sub-pixels R, G, and B, and an optical turning layer between the anode layers of three sub-pixels R, G, and B and the reflective metal layer, wherein the anode layers of the three sub-pixels R, G, and B have a same thickness, and wherein the optical turning layer has a same thickness throughout each of the anode layers of the three sub-pixels R, G, and B.
2. The top-emitting WOLED display device according to claim 1 , wherein the optical turning layer comprises two or more transparent films superimposed on each other.
3. The top-emitting WOLED display device according to claim 1 , wherein the optical turning layer is made of a transparent material having a refractive index n >1.7.
4. The top-emitting WOLED display device according to claim 2 , further comprising an oxide insert layer between each of the two or more transparent films superimposed on each other.
5. The top-emitting WOLED display device according to claim 1 , wherein the optical turning layer has a thickness in a range from 100 nm to 500 nm.
6. The top-emitting WOLED display device according to claim 2 , wherein the transparent films are ITO thin films, IZO thin films, or AZO thin films.
7. The top-emitting WOLED display device according to claim 1 , wherein the reflective metal layer is made of aluminum, an aluminum alloy, silver, or a silver alloy.
8. The top-emitting WOLED display device according to claim 1 , further comprising a TFT array substrate, a WOLED layer, an encapsulant resin material layer, a color filter, a sealant frame, and a cover glass,
wherein the reflective metal layer is formed on the TFT array substrate; the optical turning layer is formed on the reflective metal layer; the WOLED layer is formed on the optical turning layer the eneapsulant resin material layer is formed on the WOLED layer; the cover glass is arranged above the encapsulant resin material; the color filter is fitted inside the cover glass; and the cover glass and the TFT array substrate are fixed by the sealant frame.
9. The top-emitting WOLED display device according to claim 2 , further comprising a TFT array substrate, a WOLED layer, an encapsulant resin material layer, a color filter, a sealant frame, and a cover glass,
wherein the reflective metal layer is formed on the TFT array substrate; the optical turning layer is formed on the reflective metal layer; the WOLED layer is formed on the optical turning layer the encapsulant resin material layer is formed on the WOLED layer; the cover glass is arranged above the encapsulant resin material; the color filter is fitted inside the cover glass; and the cover glass and the TFT array substrate are fixed by the sealant frame.
10. The top-emitting WOLED display device according to claim 3 , further comprising a TFT array substrate, a WOLED layer, an eneapsulant resin material layer, a color filter, a sealant frame, and a cover glass,
wherein the reflective metal layer is formed on the TFT array substrate; the optical turning layer is formed on the reflective metal layer; the WOLED layer is formed on the optical turning layer the encapsulant resin material layer is formed on the WOLED layer; the cover glass is arranged above the eneapsulant resin material; the color filter is fitted inside the cover glass; and the cover glass and the TFT array substrate are fixed by the sealant frame.
11. The top-emitting WOLED display device according to claim 8 , wherein the WOLED layer comprises an anode layer, a light emitting unit, and a semi-transparent cathode layer,
wherein the semi-transparent cathode layer is formed on a light emitting layer, and the light emitting unit is formed on the anode laver.
12. The top-emitting WOLED display device according to claim 11 , wherein the semi-transparent cathode layer is made of a low work function metal material.
13. The top-emitting WOLED display device according to claim 11 , wherein the light emitting unit comprises a function layer, a light emitting layer, and a connection layer.
14. The top-emitting WOLED display device according to claim 13 , wherein the light emitting layers are of multiple colors.
15. The top-emitting WOLED display device according to claim 13 , wherein the function layer is a combination of a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer.
16. The top-emitting WOLED display device according to claim 12 , wherein the semi-transparent cathode layer has a thickness in a range from 10 nm to 30nm.