IP Library Granted Patent US 10,304,653
Granted Patent B2
US 10,304,653 · App. 15/500,449 · Granted May 28, 2019

Ion milling device, ion source and ion milling method

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Quick Facts
Patent No.
US 10,304,653
App. No.
15/500,449
Granted
May 28, 2019
Kind
B2
Abstract

To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method. An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m 3 to 191 kJ/m 3 .

Claims (56)

1. An ion milling device comprising:

an ion generator configured to cause electrons to collide with a gas supplied from an outside of the ion milling device and to generate ions; and

an acceleration electrode at which a voltage of 5 kV or more is applied as an electrode that accelerates the ions emitted from the ion generator, and that irradiates a sample with the accelerated ions so as to process the sample,

wherein the ion generator includes

a cathode from which the electrons are emitted;

an anode that is provided within the ion generator and has an inner diameter of 5.2 mm or less; and

a magnetic-field generator that generates a magnetic field within the ion generator by using a magnet having a maximum energy product ranging from 110 kJ/m 3 to 191 kJ/m 3 .

2. The ion milling device according to claim 1 ,

wherein the magnet is a samarium-cobalt magnet.

3. The ion milling device according to claim 1 ,

wherein a voltage of 6 kV or more is applied at the acceleration electrode.

4. The ion milling device according to claim 1 ,

wherein the ion generator is a penning type.

5. The ion milling device according to claim 1 ,

wherein a residual magnetic flux density remaining in a permanent magnet of the magnetic-field generator in an absence of a voltage being present at said anode of the ion generator ranges from 810 mT to 950 mT.

6. The ion milling device according to claim 1 ,

wherein a holding force of the magnetic-field generator ranges from 620 mT to 660 mT.

7. The ion milling device according to claim 1 ,

wherein a shape of the anode is a cylindrical shape, and an inner diameter of the anode is the same as a diameter of an outlet hole of the anode.

8. The ion milling device according to claim 1 ,

wherein a diameter of an outlet hole of the anode is smaller than an inner diameter of the anode.

9. The ion milling device according to claim 8 ,

wherein the diameter of the outlet hole of the anode is 4 mm.

10. An ion source that is used in an ion milling device that includes an ion generator which causes electrons to collide with a gas supplied from an outside of the ion milling device and that generates ions, and an acceleration electrode at which a voltage of 5 kV or more is applied as an electrode that accelerates the ions emitted from the ion generator, and that irradiates a sample with the accelerated ions so as to process the sample, the ion source comprising:

a cathode from which the electrons are emitted;

an anode which is provided within the ion generator, and has an inner diameter of 5.2 mm or less; and

a magnetic-field generator that generates a magnetic field within the ion generator by using a magnet having a maximum energy product ranging from 110 kJ/m 3 to 191 kJ/m 3 .

11. The ion source according to claim 10 ,

wherein the magnet is a samarium-cobalt magnet.

12. The ion source according to claim 10 ,

wherein a voltage of 6 kV or more is applied at the acceleration electrode.

13. The ion source according to claim 10 ,

wherein the ion source is a penning type.

14. The ion source according to claim 10 ,

wherein a residual magnetic flux density of a permanent magnet of the magnetic-field generator in an absence of a voltage being present at said anode of the ion generator ranges from 810 mT to 950 mT.

15. The ion source according to claim 10 ,

wherein a holding force of the magnetic-field generator ranges from 620 mT to 660 mT.

16. An ion milling device comprising:

an ion generator configured to cause electrons to collide with a gas supplied from an outside of the ion milling device and to generate ions; and

an acceleration electrode at which a voltage of 5 kV or more is applied as an electrode that accelerates the ions emitted from the ion generator, and that irradiates a sample with the accelerated ions so as to process the sample,

wherein the ion generator includes

a cathode from which the electrons are emitted;

an anode that is provided within the ion generator and has an inner diameter of 5.2 mm or less; and

a magnetic-field generator that generates a magnetic field on a central axis of the ion generator in a range of 140 mT to 160 mT.

17. The ion milling device according to claim 16 ,

wherein a voltage of 6 kV or more is applied at the acceleration electrode.

18. An ion milling method comprising:

an emission step of emitting electrons from a cathode;

an ion generation step of causing the electrons to collide with a gas supplied, from an outside of a milling device, on an inside of an anode having an inner diameter of 5.2 mm or less and generating ions;

a magnetic-field generation step of causing the ions to act on a magnetic field generated by a magnet having a maximum energy product ranging from 110 kJ/m 3 to 191 kJ/m 3 ;

an acceleration step of applying a voltage of 5 kV or more to the ions and accelerating the ions; and

a processing step of irradiating a sample with the accelerated ions so as to process the sample.

19. The ion milling method according to claim 18 ,

wherein the acceleration step is an acceleration step of applying a voltage of 6 kV or more to the ions and accelerating the ions.

20. The ion milling method according to claim 18 ,

wherein the magnetic-field generation step is a step of generating a magnetic field on a central axis of an ion generation unit in a range of 140 mT to 160 mT.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 17, 2018
From: ASAI, KENGO; SHICHI, HIROYASU; TAKASU, HISAYUKI; IWAYA, TORU
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 045838/0449 →