IP Library › Granted Patent US 10,256,164
Granted Patent B2
US 10,256,164 · App. 15/506,271 · Granted Apr 9, 2019

Semiconductor film and field effect transistor having semiconductor and polymer portions stacked adjacent each other

Inventors: Junichi Takeya (Tokyo, JP); Junshi Soeda (Tokyo, JP)
Assignee: THE UNIVERSITY OF TOKYO
H01L23/14H01L23/13H01L25/00H01L29/786H01L51/0003H01L51/052H01L51/0558
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Quick Facts
Patent No.
US 10,256,164
App. No.
15/506,271
Granted
Apr 9, 2019
Kind
B2
Abstract

The present invention provides a semiconductor film, a field effect transistor, and a method of fabricating the semiconductor film that has one or two or more semiconductor portions, which are formed from a semiconductor material, and one or two or more polymer portions, which are formed from a polymer material. The semiconductor portion and the polymer portion are adjacent to each other and are integrated.

Claims (8)

1. A semiconductor film comprising:

a semiconductor portion that is formed from an organic semiconductor material and comprises crystals and has a width of 1 mm or more; and

a polymer portion that is formed from a polymer material, wherein:

each of the semiconductor portion and the polymer portion has a layer shape, and the semiconductor portion and the polymer portion are stacked adjacent to each other in a stacking direction,

an angle between orientation axes of the crystals is 10 degrees or less, and

each crystal has a length of 200 μm or more.

2. The semiconductor film according to claim 1 , wherein the semiconductor portion is a single crystal.

3. A field effect transistor comprising the semiconductor film according to claim 1 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 25, 2017
From: TAKEYA, JUNICHI; SOEDA, JUNSHI
To: THE UNIVERSITY OF TOKYO
Reel/Frame 042505/0125 →
Priority Claims (1)
JP 2014-175793 · Aug 29, 2014 · national
Continuity (1)
Related Publication 20180053701A1 · Feb 22, 2018
Cited By (1)
US 12,206,009