IP Library Granted Patent US 10,456,871
Granted Patent B2
US 10,456,871 · App. 15/506,353 · Granted Oct 29, 2019

Solder paste

Inventors: Sebastian Fritzsche (Hanau, DE); Jürgen Schulze (Potsdam, DE); Jörg Trodler (Königs Wusterhausen, DE)
Assignee: Heraeus Deutschland GmbH & Co. KG
B23K35/262B23K1/0016B23K35/025B23K35/0244B23K35/302B23K35/362C22C9/02C22C9/04C22C13/00H01L24/27H01L24/83H05K1/181H05K3/3484H01L2224/2732H01L2224/27318H01L2224/29111H01L2224/29118H01L2224/29139H01L2224/29147H01L2224/32245H01L2224/83801H01L2924/014H01L2924/01015H01L2924/1203H01L2924/1304H01L2924/20106H01L2924/20107H05K2201/10015H05K2201/10022H05K2201/10166H05K2201/10174
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Quick Facts
Patent No.
US 10,456,871
App. No.
15/506,353
Granted
Oct 29, 2019
Kind
B2
Abstract

A solder paste that contains or consists of (i) 10-30% by weight of at least one type of particles that each contain a phosphorus fraction of >0 to ≤500 wt-ppm and are selected from copper particles, copper-rich copper/zinc alloy particles, and copper-rich copper/tin alloy particles, (ii) 60-80% by weight of at least one type of particles selected from tin particles, tin-rich tin/copper alloy particles, tin-rich tin/silver alloy particles, and tin-rich tin/copper/silver alloy particles, and (iii) 3-30% by weight solder flux, in which the mean particle diameter of metallic particles (i) and (ii) is ≤15 μm.

Claims (17)

1. A solder paste comprising (i) 10-30% by weight of at least one type of particles each comprising a phosphorus fraction of >0 to ≤500 wt-ppm and selected from the group consisting of copper particles, copper-rich copper/zinc alloy particles, and copper-rich copper/tin alloy particles, (ii) 60-80% by weight of at least one type of particles containing no phosphorus and selected from the group consisting of tin particles, tin-rich tin/copper alloy particles, tin-rich tin/silver alloy particles, and tin-rich tin/copper/silver alloy particles, and (iii) 3-30% by weight solder flux, wherein the mean particle diameter of metallic particles (i) and (ii) is ≤15 μm.

2. The solder paste according to claim 1 , wherein the phosphorus content is >0 to ≤100 wt-ppm.

3. The solder paste according to claim 1 , wherein the composition of the copper-rich copper/zinc alloys or copper-rich copper/tin alloys is 60 to 99.5% by weight copper and 0.5 to 40% by weight zinc or tin.

4. The solder paste according to claim 1 , wherein the particles of type (i) are produced by atomization in an inert gas atmosphere.

5. The solder paste according to claim 1 , wherein the composition of the tin-rich tin/copper alloys, tin/silver alloys or tin/copper/silver alloys is 95-99.5% by weight tin and 0.5-5% by weight copper, silver or copper plus silver.

6. A method for making a firmly-bonded connection of an electronic component to a substrate, comprising

a) providing an electronic component having a first surface to be connected and a substrate having a second surface to be connected;

b) applying a solder paste according to claim 1 onto at least one of the first and second surfaces to be connected;

c) arranging the electronic component and the substrate such that the first surface of the electronic component to be connected and the second surface of the substrate to be connected contact each other by the solder paste; and

d) soldering the arrangement from c) to generate a firmly-bonded connection between the electronic component and the substrate;

wherein the thickness of the applied layer of solder paste is at least 20 μm.

7. The method according to claim 6 , wherein the electronic component is a chip, a semiconductor diode, a transistor, a resistor or a capacitor.

8. The method according to claim 6 , wherein the substrate is a printed circuit board, a direct-bonded copper or a lead frame.

9. The method according to claim 6 , wherein the solder paste is applied by a screen printing method, a stencil printing method, jet or a dispensing technique.

10. The method according to claim 6 , wherein the soldering temperature is in a range of 240-260° C.

11. The method according to claim 6 , wherein the arrangement obtained after completion of step d) is heat-treated at a temperature in a range of 40-217° C. for a period of 1 minute up to 24 hours.

12. An arrangement obtained by the method of claim 6 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2024
From: HERAEUS DEUTSCHLAND GMBH & CO. KG
To: HERAEUS ELECTRONICS GMBH & CO. KG
Reel/Frame 068409/0258 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 28, 2017
From: FRITZSCHE, SEBASTIAN; SCHULZE, JURGEN; TRODLER, JORG
To: HERAEUS DEUTSCHLAND GMBH & CO. KG
Reel/Frame 043129/0241 →
Priority Claims (1)
EP 14182395 · Aug 27, 2014 · regional
Continuity (1)
Related Publication 20170252873A1 · Sep 7, 2017
Cited By (1)
US 12,606,887