Solid-state imaging device, imaging apparatus, and electronic apparatus
The present technology relates to a solid-state imaging device, an imaging apparatus, and an electronic apparatus, which can suppress a color mixture without lowering the sensitivity. In pixels (red pixels (R pixels), green pixels (G pixels), and blue pixels (B pixels)) other than W pixels and adjacent to the W pixels, light shielding films thicker than those of the W pixels are formed at positions adjacent to the W pixels. Furthermore, the shorter the wavelength, the thicker the light shielding film in the RGB pixels other than the W pixels. The present technology is applicable to the solid-state imaging device.
1. A solid-state imaging device, comprising:
a filter configured to extract and pass, pixel-by-pixel, white light that is incident light itself and light of a plurality of specific wavelengths; and
an inter-pixel light shielding film configured to shield, pixel-by-pixel, light from an adjacent pixel in the filter,
wherein the inter-pixel light shielding film in a pixel that passes the white light is thinner, in a region adjacent to a pixel that passes light of another specific wavelength, than the inter-pixel light shielding film in the pixel that passes light of another specific wavelength.
2. The solid-state imaging device according to claim 1 ,
wherein the inter-pixel light shielding film in the pixel that passes the light of the other specific wavelength is thicker, as the wavelength is shorter.
3. The solid-state imaging device according to claim 1 ,
wherein the light of the plurality of specific wavelengths includes red light, green light, and blue light.
4. The solid-state imaging device according to claim 3 ,
wherein the inter-pixel light shielding film in a pixel for the red light is thinner than the inter-pixel light shielding film in a pixel for the green light, and the inter-pixel light shielding film in the pixel for the green light is thinner than the inter-pixel light shielding film in a pixel for the blue light.
5. The solid-state imaging device according to claim 1 ,
wherein the light of the plurality of specific wavelengths includes yellow light, magenta light, and cyan light.
6. The solid-state imaging device according to claim 5 ,
wherein the inter-pixel light shielding film in a pixel for the yellow light is thinner than the inter-pixel light shielding film in a pixel for the magenta light, and the inter-pixel light shielding film in the pixel for the magenta light is thinner than the inter-pixel light shielding film in a pixel for the cyan light.
7. The solid-state imaging device according to claim 1 ,
wherein the light of the plurality of specific wavelengths includes red light and green light.
8. The solid-state imaging device according to claim 7 ,
wherein the inter-pixel light shielding film in a pixel for the red light is thinner than the inter-pixel light shielding film in a pixel for the green light.
9. The solid-state imaging device according to claim 1 ,
wherein the light of the plurality of specific wavelengths includes red light and blue light.
10. The solid-state imaging device according to claim 9 ,
wherein the inter-pixel light shielding film in a pixel for the red light is thinner than the inter-pixel light shielding film in a pixel for the blue light.
11. The solid-state imaging device according to claim 1 ,
wherein the light of the plurality of specific wavelengths includes green light and blue light.
12. The solid-state imaging device according to claim 11 ,
wherein the inter-pixel light shielding film in a pixel for the green light is thinner than the inter-pixel light shielding film in a pixel for the blue light.
13. The solid-state imaging device according to claim 1 ,
wherein the inter-pixel light shielding film disposed at a position adjacent to the pixel that passes the white light in a pixel that passes the light of the plurality of specific wavelengths and that is adjacent to the pixel that passes the white light is thicker than the inter-pixel light shielding film at another position.
14. The solid-state imaging device according to claim 13 ,
wherein the inter-pixel light shielding film disposed at the position adjacent to the pixel that passes the white light in the pixel that passes the light of the plurality of specific wavelengths and that is adjacent to the pixel that passes the white light is thinner, as light of specific wavelength passing therethrough has a longer wavelength.
15. An imaging apparatus, comprising:
a filter configured to extract and pass, pixel-by-pixel, white light that is incident light itself and light of a plurality of specific wavelengths; and
an inter-pixel light shielding film configured to shield, pixel-by-pixel, light from an adjacent pixel in the filter,
wherein the inter-pixel light shielding film in a pixel that passes the white light is thinner, in a region adjacent to a pixel that passes light of another specific wavelength, than the inter-pixel light shielding film in the pixel that passes light of another specific wavelength.
16. An electronic apparatus, comprising:
a filter configured to extract and pass, pixel-by-pixel, white light that is incident light itself and light of a plurality of specific wavelengths; and
an inter-pixel light shielding film configured to shield, pixel-by-pixel, light from an adjacent pixel in the filter,
wherein the inter-pixel light shielding film in a pixel that passes the white light is thinner, in a region adjacent to a pixel that passes light of another specific wavelength, than the inter-pixel light shielding film in the pixel that passes light of another specific wavelength.