Light-emitting diode device
A light-emitting diode device is specified, comprising at least one carrier and a light-emitting diode arranged thereon. The carrier comprises a plurality of polymer layers arranged one above another. At least one polymer layer has a cutout, in which an electrical component is embedded.
1. A light-emitting diode device, comprising at least one carrier and at least one light-emitting diode arranged on the carrier, wherein the carrier comprises a plurality of polymer layers arranged one above another, wherein at least one of the polymer layers has a cutout, wherein an electrical component is embedded in the cutout, wherein the electrical component is arranged in a centered fashion with respect to the light-emitting diode with respect to a lateral direction.
2. The light-emitting diode device according to claim 1 , wherein the carrier comprises a topmost, a bottommost and at least one inner polymer layer arranged therebetween, wherein the electrical component is embedded at least in the inner polymer layer.
3. The light-emitting diode device according to claim 1 , wherein the electrical component is surrounded by the polymer material of the carrier on all sides.
4. The light-emitting diode device according to claim 3 , wherein the component is embedded neither in the topmost nor in the bottommost polymer layer.
5. The light-emitting diode device according to claim 1 , comprising at least one through-connection for electrically contacting the electrical component, wherein the through-connection leads through at least one polymer layer.
6. The light-emitting diode device according to claim 1 , wherein the electrical component is designed for protection against electrostatic discharges.
7. The light-emitting diode device according to claim 1 , wherein the electrical component is designed as a varistor, as a silicon semiconductor protective diode, as a polymer component, as a thermal sensor, as overcurrent protection, as a ceramic multilayer capacitor, as an inductance, as a resistance or as a driver chip.
8. The light-emitting diode device according to claim 1 , wherein the polymer layer in which the component is embedded has different material properties than at least one other polymer layer of the carrier.
9. The light-emitting diode device according to claim 8 , wherein the polymer layer in which the component is embedded has a different mechanical strength than at least one other polymer layer of the carrier.
10. The light-emitting diode device according to claim 1 , wherein the light-emitting diode is at least partly recessed in a cavity in the carrier.
11. The light-emitting diode device according to claim 1 , wherein the electrical component is arranged in a centered fashion in the carrier with respect to a stacking direction of the polymer layers.
12. The light-emitting diode device according to claim 1 , comprising a plurality of light-emitting diodes arranged on the carrier.
13. The light-emitting diode device according to claim 1 , comprising a further carrier, which is arranged on the carrier, wherein the light-emitting diode is arranged on the further carrier.
14. The light-emitting diode device according to claim 1 , wherein the further carrier is designed as a ceramic carrier.
15. A light-emitting diode device, comprising at least one carrier and at least one light-emitting diode arranged on the carrier, wherein the carrier comprises a plurality of polymer layers arranged one above another and an electrical component is embedded in at least one of the polymer layers, and wherein the light-emitting diode device further comprises at least two through-connections for electrically connecting the electrical component to connection contacts and at least two further through-connections for electrically connecting the light-emitting diode to the connection contacts, wherein the at least two through-connections are located between the at least two further through-connections.