Multilayer structure, method for manufacturing same, semiconductor device, and crystalline film
A multilayer structure with excellent crystallinity and a semiconductor device of the multilayer structure with good mobility are provided. A multilayer structure includes: a corundum structured crystal substrate; and a crystalline film containing a corundum structured crystalline oxide as a major component, the film formed directly on the substrate or with another layer therebetween, wherein the crystal substrate has an off angle from 0.2° to 12.0°, and the crystalline oxide contains one or more metals selected from indium, aluminum, and gallium.
1. A crystalline film, comprising: a corundum structured crystalline oxide as a major component, wherein
the crystalline film has an off angle from 0.2° to 12.0°, and
the corundum structured crystalline oxide contains gallium that accounts for 50 percent or more of the entire components comprised in the crystalline film.
2. The crystalline film of claim 1 , wherein the off angle of the crystalline film is from 1° to 8°.
3. The crystalline film of claim 1 , wherein the crystalline film is a c-, m-, a-, or r-plane crystalline film.
4. The crystalline film of claim 1 , wherein a film thickness of the crystalline film is 1μm or more.
5. The crystalline film of claim 1 , wherein a center line average roughness(Ra) of a film surface of the crystalline film is 10 nm or less and a maximum difference in elevation (P-V value) of the film surface is 100 nm or less, measured using an atomic force microscope.
6. The crystalline film of claim 1 , wherein the crystalline oxide is a semiconductor.
7. The crystalline film of claim 6 , wherein the crystalline film further contains a dopant.
8. The crystalline film according to claim 7 , wherein the dopant contained in the crystalline film comprises an n-type dopant.
9. The crystalline film according to claim 7 , wherein the dopant has a concentration that is in a range of 1×10 16 /cm 3 to 1×10 22 /cm 3 .
10. A semiconductor device, comprising:
stalline film of claim 6 ; and
an electrode that is on the crystalline film.
11. The semiconductor device according to claim 10 , wherein the electrode comprises a metal selected among Al, Mo, Co, Zr, Sn, Nb, Fe, Cr, Ta, Ti, Au, Pt, V, Mn, Ni, Cu, Hf, W, Ir, Zn, In, Pd, Nd, and Ag.
12. The semiconductor device according to claim 10 , wherein the electrode comprises an alloy selected among Al, Mo, Co, Zr, Sn, Nb, Fe, Cr, Ta, Ti, Au, Pt, V, Mn, Ni, Cu, Hf, W, Ir, Zn, In, Pd, Nd, and Ag.
13. The semiconductor device according to claim 10 , wherein the electrode comprises a metal oxide conductive film.
14. The semiconductor device according to claim 10 , wherein the electrode comprises an organic conductive compound.
15. The crystalline film according to claim 1 , wherein the crystalline film comprises a mixed crystal.
16. The crystalline film according to claim 1 , wherein the corundum structured crystalline oxide contains indium.
17. The crystalline film according to claim 1 . wherein the corundum structured crystalline oxide contains aluminum.
18. The crystalline film according to claim 17 , wherein the corundum structured crystalline oxide contains indium.
19. The crystalline film according to claim 1 , wherein the crystalline film comprises a dopant.
20. A semiconductor device comprising:
a crystalline film comprising a corundum structured crystalline oxide as a major component and a dopant, wherein the corundum structured crystalline oxide contains gallium that accounts for 50 percent or more of the entire components comprised in the crystalline film, and the crystalline film has an off angle 0.2° to 12.0°; and
an electrode that is on the crystalline film.