Semiconductor module including a case and base board
An object of the present invention is to provide a semiconductor module with high heat dissipation at a low cost. A semiconductor module according to the present invention includes: a case having a hollow portion; a base board made of an aluminum alloy having a first portion corresponding to the hollow portion of the case, and a second portion corresponding to a main body portion of the case, the base board being attached to a bottom face of the case via the second portion; a ceramic insulating substrate disposed on the first portion of the base board; a wiring pattern disposed on the ceramic insulating substrate; semiconductor elements disposed on the wiring pattern; metal wiring boards connected to the semiconductor elements; and a sealing resin that seals the hollow portion of the case.
1. A semiconductor module comprising:
a case having a hollow portion;
a base board made of an aluminum alloy having a first portion corresponding to said hollow portion of said case, and a second portion corresponding to a main body portion of said case, said base board being attached to a bottom face of said case via said second portion;
a ceramic insulating substrate disposed on said first portion of said base board;
a first pure aluminum layer disposed between said first portion of said base board and said ceramic insulating substrate;
a wiring pattern disposed on said ceramic insulating substrate;
a semiconductor element disposed on said wiring pattern;
a metal wiring board connected to said semiconductor element; and
a sealing resin that seals said hollow portion of said case where said ceramic insulating substrate, said wiring pattern, said semiconductor element, and said metal wiring board are disposed, wherein
said wiring pattern includes
an aluminum alloy layer, and
a second pure aluminum layer disposed between the aluminum alloy layer and said ceramic insulating substrate.
2. The semiconductor module according to claim 1 , wherein
a thickness of said second portion of said base board is larger than a thickness of said first portion.
3. The semiconductor module according to claim 1 , wherein the thickness of said first portion of said base board is 0.5 mm or more.
4. The semiconductor module according to claim 1 , wherein
a ratio of thickness of said wiring pattern to thickness of said base board and said first pure aluminum layer is (not less than 1.1 and not more than 1.45) : 1.
5. The semiconductor module according to claim 1 , wherein
said aluminum alloy of said base board is an Al-Mn-based aluminum alloy or an Al—Si—Mg-based aluminum alloy.
6. The semiconductor module according to claim 1 , wherein
said sealing resin has a Young's modulus of 100 MPa or more, and a linear expansion coefficient not less than 6 ppm/° C. and not more than 6 ppm/° C.
7. The semiconductor module according to claim 1 , wherein
said base board includes a groove along an outer periphery of said ceramic insulating substrate, in a surface of said first portion on which said ceramic insulating substrate is disposed.
8. The semiconductor module according to claim 1 , further comprising:
a groove that is provided in a facing portion in which said main body portion of said case and said second portion of said base board facing each other, said groove opening to said hollow portion of said case.
9. The semiconductor module according to claim 1 , wherein
said ceramic insulating substrate includes first and second ceramic insulating substrates, and
the semiconductor module further comprises a beam portion disposed between said first and second ceramic insulating substrates on said base board.
10. The semiconductor module according to claim 1 , wherein
and said base board is formed of a clad material of an aluminum alloy and a copper alloy, instead of said aluminum alloy.
11. The semiconductor module according to claim 1 , wherein
said semiconductor element is a wide bandgap semiconductor element.