METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device includes: forming an amorphous metal film on a substrate by time-divisionally conducting a cycle a predetermined number of times, the cycle including: (a) simultaneously supplying a metal-containing gas and a first reducing gas to the substrate to form a first amorphous metal layer on the substrate, and (b) forming a second amorphous metal layer on the first amorphous metal layer by time-divisionally supplying, a predetermined number of times, the metal-containing gas and a second reducing gas to the substrate on which the first amorphous metal layer is formed; and forming a crystallized metal layer on the substrate by simultaneously supplying the metal-containing gas and the first reducing gas to the substrate on which the amorphous metal film is formed.
1 . A method of manufacturing a semiconductor device comprising:
forming an amorphous metal film on a substrate by time-divisionally conducting a cycle a predetermined number of times, the cycle comprising:
(a) simultaneously supplying a metal-containing gas and a first reducing gas to the substrate to form a first amorphous metal layer on the substrate, and
(b) forming a second amorphous metal layer on the first amorphous metal layer by time-divisionally supplying, a predetermined number of times, the metal-containing gas and a second reducing gas to the substrate on which the first amorphous metal layer is formed; and
forming a crystallized metal layer on the substrate by simultaneously supplying the metal-containing gas and the first reducing gas to the substrate on which the amorphous metal film is formed.
2 . The method of manufacturing a semiconductor device according to claim 1 , wherein the forming of a first amorphous metal layer, the forming of a second amorphous metal layer, and the forming of a crystallized metal layer are each conducted in a state where the substrate is heated at a same predetermined temperature.
3 . The method of manufacturing a semiconductor device according to claim 2 , wherein the predetermined temperature is a temperature within a range of a room temperature or more and 200° C. or less.
4 . The method of manufacturing a semiconductor device according to claim 1 , wherein the second reducing gas is a boron-containing gas or a silicon-containing gas.
5 . The method of manufacturing a semiconductor device according to claim 4 , wherein the first reducing gas is hydrogen (H 2 ), and the second reducing gas is any one of diborane (B 2 H 6 ), a mono-silane (SiH 4 ) gas and a disilane (Si 2 H 6 ) gas.
6 . The method of manufacturing a semiconductor device according to claim. 1 , wherein the metal-containing gas is a tungsten-containing gas, the first amorphous metal layer and the second amorphous metal layer are amorphous tungsten layers, the amorphous metal film is an amorphous tungsten film, and the crystallized metal layer is a crystallized tungsten film.
7 . The method of manufacturing a semiconductor device according to claim 1 , wherein at the forming of a crystallized metal layer, at least a part of the amorphous metal film is crystallized by forming the crystallized metal layer on the amorphous metal film.
8 . The method of manufacturing a semiconductor device according to claim 1 , wherein at the forming of an amorphous metal film, the amorphous metal film is formed on a seed layer formed on a barrier metal film by the procedure (b).
9 . The method of manufacturing a semiconductor device according to claim 8 , wherein the barrier metal film is a titanium nitride film.
10 . The method of manufacturing a semiconductor device according to claim 1 , wherein the forming of the amorphous metal film and the forming of the crystallized metal layer are conducted in a same processing chamber.