Master alloy for sputtering target and method for producing sputtering target
Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. The present invention consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.
1. A method of producing a sputtering target, comprising the steps of:
pulverizing a master alloy that consists of any one combination of X2-Y1 and X2-Y2, where X2 consists of one or more of Ru, Mo, Nb and Hf, Y1 consists of one or both of Cr and Mn, and Y2 consists of Co,
mixing the master alloy with a powder composed of the X2 to produce a mixed powder, and
sintering the mixed powder to obtain a sputtering target material,
wherein elements constituting the sputter target are selected among X2, Y1, and Y2, such that the sputtering target consists of an alloy of X2-Y1 or X2-Y2, and
wherein a variation in an in-plane metal composition of Y1 or Y2 of the sputtering target is 30% or less.
2. The method of producing a sputtering target according to claim 1 , wherein the mixing is performed so that a content of Y1 or Y2 of a composition constituting the master alloy falls within a range of 0.1 to 40.0 at %.
3. A sputtering target in which elements constituting the sputter target are selected among X2, Y1, and Y2, wherein X2 consists of one or more of Ru, Mo, Nb and Hf, Y1 consists of one or both of Cr and Mn, and Y2 consists of Co, and wherein the sputtering target consists of an alloy of X2-Y1 or X2-Y2, and wherein a variation in an in-plane metal composition of Y1 or Y2 of the sputtering target is 30% or less.
4. The sputtering target according to claim 3 , wherein the variation in an in-plane metal composition of Y1 or Y2 of the sputtering target is 20% or less.
5. The sputtering target according to claim 3 , wherein the variation in an in-plane metal composition of Y1 or Y2 of the sputtering target is 15% or less.