Coupled memristor devices to enable feedback control and sensing of micro/nanoelectromechanical actuator and sensors

1. A MEMS apparatus with dynamic displacement control, said apparatus comprising:

a MEMS parallel plate capacitor integrated with at least one memristor in a series configuration wherein a displacement is observable as a function of memristance, such that an upper electrode position is capable of being interpreted in a form of a resistance rather than a capacitance;

a correlation circuit that receives input from the memristor, wherein the correlation circuit represents a polynomial equation that correlates with MEMS displacement;

a first summation circuit that receives input from the correlation circuit and a signal builder;

a speed estimator circuit that receives input from the correlation circuit;

a second summation circuit that receives input from the first summation circuit and the speed estimator circuit and provides an input to the MEMS parallel plate capacitor;

wherein a current in said apparatus is limited by said MEMS parallel plate capacitor restricting a change in a resistance of said at least one memristor; and

wherein said at least one memristor is employable as a sensor element to improve a MEMS operation range.

2. The apparatus of claim 1 wherein said MEMS parallel plate capacitor and said at least one memristor is employed as a part of a MEMS sensor.

3. The apparatus of claim 1 wherein said MEMS parallel plate capacitor and said at least one memristor is employed as a part of a MEMS actuator.

4. The apparatus of claim 1 wherein further comprising at least one amplification stage that maximizes a charge interaction.

5. The apparatus of claim 4 wherein said at least one amplification stage comprises a BJT amplification.

6. The apparatus of claim 4 wherein said at least one amplification stage comprises via a MOSFET amplification.

7. The apparatus of claim 4 wherein said at least one amplification stage comprises an Op Amp stage.

8. The apparatus of claim 1 wherein said at least one memristor is employable as said sensor element for a MEMS displacement for voltage close-loop control to improve said MEMS operation range.

9. A MEMS apparatus with dynamic displacement control, said apparatus comprising:

a MEMS parallel plate capacitor integrated with at least one memristor in a series configuration wherein a displacement is observable as a function of memristance, such that an upper electrode position is capable of being interpreted in a form of a resistance rather than a capacitance;

a correlation circuit that receives input from the memristor, wherein the correlation circuit represents a polynomial equation that correlates with MEMS displacement;

a first summation circuit that receives input from the correlation circuit and a signal builder;

a speed estimator circuit that receives input from the correlation circuit;

a second summation circuit that receives input from the first summation circuit and the speed estimator circuit and provides an input to the MEMS parallel plate capacitor;

at least one amplification stage of said apparatus that maximizes a charge interaction;

wherein a current in said apparatus is limited by said MEMS parallel plate capacitor restricting a change in a resistance of said at least one memristor; and

wherein said at least one memristor is employable as a sensor element to improve a MEMS operation range.

10. The apparatus of claim 9 wherein said MEMS parallel plate capacitor and said at least one memristor is employed as a part of a MEMS sensor.

11. The apparatus of claim 9 wherein said MEMS parallel plate capacitor and said at least one memristor is employed as a part of a MEMS actuator.

12. The apparatus of claim 9 wherein said at least one amplification stage comprises a BJT amplification.

13. The apparatus of claim 9 wherein said at least one amplification stage comprises via a MOSFET amplification.

14. The apparatus of claim 9 wherein said at least one amplification stage comprises an Op Amp stage.

15. The apparatus of claim 9 wherein said at least one memristor is employable as said sensor element for a MEMS displacement for voltage close-loop control to improve said MEMS operation range.

16. A MEMS apparatus with dynamic displacement control, said apparatus comprising:

a MEMS parallel plate capacitor integrated with at least one memristor in a series configuration wherein a displacement is observable as a function of memristance, such that an upper electrode position is capable of being interpreted in a form of a resistance rather than a capacitance;

a correlation circuit that receives input from the memristor, wherein the correlation circuit represents a polynomial equation that correlates with MEMS displacement;

a first summation circuit that receives input from the correlation circuit and a signal builder;

a speed estimator circuit that receives input from the correlation circuit;

a second summation circuit that receives input from the first summation circuit and the speed estimator circuit and provides an input to the MEMS parallel plate capacitor;

at least one amplification stage of said apparatus that maximizes a charge interaction;

wherein a current in said apparatus is limited by said MEMS parallel plate capacitor restricting a change in a resistance of said at least one memristor;

wherein said at least one memristor is employable as a sensor element to improve a MEMS operation range; and

wherein said at least one memristor comprises said sensor element for a MEMS displacement for voltage close-loop control to improve said MEMS operation range.

17. The apparatus of claim 16 wherein said MEMS parallel plate capacitor and said at least one memristor is employed as a part of a MEMS sensor.

18. The apparatus of claim 16 wherein said MEMS parallel plate capacitor and said at least one memristor is employed as a part of a MEMS actuator.

19. The apparatus of claim 16 wherein said at least one amplification stage comprises a BJT amplification.

20. The apparatus of claim 16 wherein said at least one amplification stage comprises via a MOSFET amplification.