IP Library Granted Patent US 10,191,380
Granted Patent B2
US 10,191,380 · App. 15/519,044 · Granted Jan 29, 2019

Composition for resist patterning and method for forming pattern using same

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Quick Facts
Patent No.
US 10,191,380
App. No.
15/519,044
Granted
Jan 29, 2019
Kind
B2
Abstract

[Problem] To provide a composition capable of improving surface roughness of resist patterns, and also to provide a pattern formation method employing the composition. [Solution] The present invention provides a composition containing a particular nitrogen-containing compound, an anionic surfactant having a sulfo group, and water; and also provides a pattern formation method containing a step of applying the composition to a resist pattern beforehand developed and dried.

Claims (21)

1. A resist pattern treatment composition comprising:

(A) a nitrogen-containing compound showing basicity when dissolved in water and having a boiling point of 48° C. or more, and said nitrogen-containing compound is selected from the group consisting of:polyvinylamine, polyvinylimidazole, polyallylamine, polydiallylamine, poly(allylamine-co-diallylamine) and polyethyleneimine;

(B) an anionic surfactant having a sulfo or carboxyl group, and

(C) water.

2. The resist pattern treatment composition according to claim 1 , wherein said nitrogen-containing compound is selected from the group consisting of: polyvinylamine, polyvinylimidazole, polyallylamine, polydiallylamine and poly(allylamine-co-diallylamine).

3. The resist pattern treatment composition according to claim 1 , wherein said nitrogen-containing compound is polyethyleneimine.

4. The resist pattern treatment composition according to claim 1 , wherein said nitrogen-containing compound is contained in an amount of 50 to 100,000 ppm based on the total weight of the composition.

5. The resist pattern treatment composition according to claim 1 , wherein said anionic surfactant is selected from the group consisting of: alkylsulfonic acids, alkylarylsulfonic acids, sodium salts thereof, potassium salts thereof, ammonium salts thereof, and amine salts thereof.

6. The resist pattern treatment composition according to claim 5 , wherein said anionic surfactant is contained in an amount of 50 to 100,000 ppm based on the total weight of the composition.

7. The resist pattern treatment composition according to claim 6 , further comprising additive at least one selected from acid, base and organic solvent.

8. The resist pattern treatment composition according to claim 7 , wherein the additive is selected from the group consisting of formic acid, acetic acid, propionic acid, benzoic acid, phthalic acid, salicylic acid, lactic acid, malic acid, citric acid, oxalic acid, malonic acid, succinic acid, fumaric acid, maleic acid, aconitic acid, glutaric acid, adipic acid, monoethanolamine, diethanolamine, triethanolamine, triisopropanolamine and tetramethylammonium.

9. The resist pattern treatment composition according to claim 7 , wherein the additive is an organic solvent selected from the group consisting of methyl alcohol, ethyl alcohol, isopropyl alcohol, t-butyl alcohol, ethylene glycol, diethylene glycol, acetone, methyl ethyl ketone, methyl acetate, ethyl acetate, ethyl lactate, dimethylformamide, dimethyl sulfoxide, methyl cellosolve, cellosolve, butyl cellosolve, cellosolve acetate, alkylcellosolve acetate, propyleneglycol alkyl ethers, propyleneglycol alkyl ether acetate, butyl carbitol, carbitol acetate, and tetrahydrofuran.

10. The resist pattern treatment composition according to claim 9 , wherein the amount of the organic solvent is 5 percent or less, based on the total weight of the composition.

11. The resist pattern treatment composition according to claim 9 , wherein the amount of the organic solvent is 0.1 percent or less, based on the total weight of the composition.

12. The resist pattern treatment composition according to claim 6 , further comprising chemicals selected from the group consisting of germicide, antibacterial agent, preservative, anti-mold agent, and any combination of any of these, wherein the amount of chemicals is 1 percent or less based on the total weight of the composition.

13. The resist pattern treatment composition according to claim 6 , further comprising chemicals selected from the group consisting of germicide, antibacterial agent, preservative, anti-mold agent, and any combination of any of these, wherein the amount of chemicals is 0.001 percent or less based on the total weight of the composition.

14. A pattern formation method comprising the steps of:

(1) coating a substrate with a photosensitive resin composition to form a photosensitive resin composition layer,

(2) exposing said photosensitive resin composition layer,

(3) developing the exposed photosensitive resin composition layer with a developer, and

treating the surface of the resist pattern with the composition according to claim 1 .

Assignments (5)
MERGER Recorded Jul 27, 2020
From: RIDGEFIELD ACQUISITION
To: AZ ELECTRONIC MATERIALS S.À R.L.
Reel/Frame 053323/0591 →
CHANGE OF LEGAL ENTITY Recorded Jul 27, 2020
From: AZ ELECTRONIC MATERIALS S.À R.L.
To: AZ ELECTRONIC MATERIALS GMBH
Reel/Frame 053323/0760 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 27, 2020
From: AZ ELECTRONIC MATERIALS GMBH
To: MERCK PATENT GMBH
Reel/Frame 053323/0770 →
MERGER Recorded Jul 27, 2020
From: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.À R.L.
To: RIDGEFIELD ACQUISITION
Reel/Frame 053324/0198 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 14, 2017
From: YAMAMOTO, KAZUMA; NAGAHARA, TATSURO
To: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
Reel/Frame 042007/0640 →