Method for fine line manufacturing

1. Process for the manufacturing of fine line circuitry on a transparent substrate, the process comprises the following steps in the given order

(i) providing a transparent substrate having a front side and a back side;

(ii) providing a pattern of light-shielding activation layer on the front side of said substrate; wherein the pattern of light-shielding activation layer is provided by the steps (ii.a) to (ii.c), in the following order:

(ii.a) depositing a treatment solution on the front side of the substrate, wherein the treatment solution contains carbon-based conductive, non-transparent particles having a size in the range of 0.1 nm to 1 μm;

(ii.b) selectively curing at least one portion of the deposited treatment solution on the front side of said substrate with a laser and thereby forming a pattern of light-shielding activation layer; and

(ii.c) removing any uncured remnants of the treatment solution from the substrate;

(iii) placing a photosensitive composition on the front side of the substrate including the pattern of light-shielding activation layer;

(iv) photo-curing the photosensitive composition from the back side of the substrate with a source of electromagnetic radiation;

(v) removing any uncured remnants of the photosensitive composition; and thereby selectively exposing recessed structures on the pattern of light-shielding activation layer; and

(vi) depositing of at least one metal or metal alloy into the thus formed recessed structures by an electroless plating process.

2. The process according to claim 1 , characterized in that the treatment solution is deposited by a printing method.

3. The process according to claim 1 , characterized in that height of the pattern of light-shielding activation layer ranges from 1 nm to 1 μm.

4. The process according to claim 1 , characterized in that the substrate is selected from the group consisting of borosilicate glass, quartz glass, silica glass, fluorinated glass, polyimide, polyethylene terephthalate, polyethylene, polypropylene, polyvinyl acetate, polyvinyl alcohol and mixtures and composites of the aforementioned.

5. The process according to claim 1 , characterized in that the photosensitive composition is selected from dry films, liquid resists, printable resists and photo-imageable dielectrics.

6. The process according to claim 5 , characterized in that the photosensitive composition is a dry film.

7. The process according to claim 1 , characterized in that the layer formed by the photosensitive composition has a thickness 0.1 to 20 μm.

8. The process according to claim 1 , characterized in that the metal or metal alloy deposited in step (vi) is selected from copper and copper alloy.

9. The process according to claim 1 ,

characterized in that the process comprises a further step (vii) to remove a photo-cured resin layer formed in step (iv) after the deposition of the at least one metal or metal alloy into the recessed structures and thereby exposing the formed metal or metal alloy deposit.

10. The process according to claim 1 characterized in that a refractive index of the photosensitive composition n P is substantially the same as a refractive index of the transparent substrate n T .

11. The process according to claim 1 , characterized in that the source of electromagnetic radiation is a source of light which allows for a high degree of collimation of light.

12. The process according to claim 1 , characterized in that fine line circuitry made of metal or metal alloy line sizes having a line width of 0.5 μm to 10 μm is manufactured.

13. The process according to claim 1 , characterized in that the process comprises a further step (vii) to remove a photo-cured resin layer formed in step (iv) after the deposition of the at least one metal or metal alloy into the recessed structures and thereby exposing the formed metal or metal alloy deposit.