Half-bridge power semiconductor module and method of manufacturing same
A half-bridge power semiconductor module includes an insulating wiring board including a positive-electrode wiring conductor, a bridge wiring conductor, and a negative-electrode wiring conductor arranged on or above a single insulating plate in such a way as to be electrically insulated from each other. The back-surface electrodes of a high-side power semiconductor device and a low-side power semiconductor device are joined to the front sides of the positive-electrode wiring conductor and the bridge wiring conductor. Front-surface electrodes of the high-side power semiconductor device and the low-side power semiconductor device are connected to the bridge wiring conductor and the negative-electrode wiring conductor by a plurality of bonding wires and a plurality of bonding wires.
1. A half-bridge power semiconductor module comprising:
an insulating wiring board including
an insulating plate having a single-layer structure, and having a front surface and a back surface, and
a positive-electrode wiring conductor, a bridge wiring conductor, and a negative-electrode wiring conductor arranged on or above the front surface of the insulating plate in such a way as to be electrically insulated from each other;
at least one high-side power semiconductor device with a back-surface electrode thereof joined to a front side of the positive-electrode wiring conductor;
at least one low-side power semiconductor device with a back-surface electrode thereof joined to a front side of the bridge wiring conductor;
a bridge terminal connected to the bridge wiring conductor between the high-side power semiconductor device and the low-side power semiconductor device;
a high-side terminal connected to the positive-electrode wiring conductor between the high-side power semiconductor device and the bridge terminal;
a low-side terminal connected to the negative-electrode wiring conductor between the bridge terminal and the low-side power semiconductor device;
high-side connection means for connecting a front-surface electrode of the high-side power semiconductor device and the bridge wiring conductor; and
low-side connection means for connecting a front-surface electrode of the low-side power semiconductor device and the negative-electrode wiring conductor,
the negative-electrode wiring conductor is surrounded by the bridge wiring conductor with a clearance therebetween as viewed from a direction normal to the front surface of the insulating plate.
2. The half-bridge power semiconductor module according to claim 1 , wherein a principal current flowing through the positive-electrode wiring conductor and a principal current flowing through the high-side connection means are equal to each other in magnitude and are opposite and parallel to each other in direction.
3. The half-bridge power semiconductor module according to claim 1 , wherein a principal current flowing through the bridge wiring conductor and a principal current flowing through the low-side connection means are equal to each other in magnitude and are opposite and parallel to each other in direction.
4. The half-bridge power semiconductor module according to claim 1 , wherein the bridge terminal, the high-side terminal, and the low-side terminal are arranged close and parallel to each other.
5. The half-bridge power semiconductor module according to claim 1 wherein a principal current flowing through the high-side terminal and a principal current flowing through the bridge terminal are equal to each other in magnitude and are opposite and parallel to each other in direction.
6. The half-bridge power semiconductor module according to claim 1 , wherein a principal current flowing through the low-side terminal and a principal current flowing through the bridge terminal are equal to each other in magnitude and are opposite and parallel to each other in direction.
7. The half-bridge power semiconductor module according to claim 1 , wherein a direction of a principal current flowing through the positive-electrode wiring conductor and a direction of a principal current flowing through the high-side terminal are perpendicular to each other.
8. The half-bridge power semiconductor module according to claim 1 , wherein a direction of a principal current flowing through the bridge wiring conductor and a direction of a principal current flowing through the low-side terminal are substantially perpendicular to each other.
9. The half-bridge power semiconductor module according to claim 1 , wherein
the insulating wiring board further includes a gate-signal wiring conductor and a source-signal wiring conductor arranged on the insulating plate,
the half-bridge power semiconductor module further comprises
a gate-signal terminal connected to the gate-signal wiring conductor,
a source-signal terminal connected to the source-signal wiring conductor,
gate-signal connection means for connecting the gate-signal wiring conductor and a gate electrode of at least one of the high-side power semiconductor device or the low-side power semiconductor device, and
source-signal connection means for connecting the source-signal wiring conductor and a source electrode of the at least one of the high-side power semiconductor device or the low-side power semiconductor device, and
the gate-signal connection means and the source-signal connection means are arranged in parallel to each other and the gate-signal terminal and the source-signal terminal are arranged in parallel to each other.
10. The half-bridge power semiconductor module according to claim 1 , further comprising at least one of:
a high-side snubber capacitor connected between the high-side terminal and the bridge terminal at a front surface of the insulating plate; or
a low-side snubber capacitor connected between the bridge terminal and the low-side terminal at the front surface of the insulating plate.
11. The half-bridge power semiconductor module according to claim 1 , wherein one of the high-side power semiconductor device or the low-side power semiconductor device is a power switching element, and the other is a power diode.
12. The half-bridge power semiconductor module according to claim 1 , wherein at least one of the high-side power semiconductor device or the low-side power semiconductor device includes a power switching element and a power diode connected in anti-parallel to the power switching element.
13. The half-bridge power semiconductor module according to claim 12 , wherein in at least one of the positive-electrode wiring conductor or the bridge wiring conductor, a slit is formed as a partition between the power switching element and the power diode.
14. The half-bridge power semiconductor module according to claim 12 , wherein two or more of the high-side power semiconductor devices are aligned in one direction in such a way as to share a flow path for principal currents flowing through each of the positive-electrode wiring conductor and the high-side connection means.
15. The half-bridge power semiconductor module according to claim 12 , wherein two or more of the low-side power semiconductor devices are aligned in one direction in such a way as to share a flow path for principal currents flowing through each of the bridge wiring conductor and the low-side connection means.
16. The half-bridge power semiconductor module according to claim 1 , wherein the high-side terminal, the bridge terminal, and the low-side terminal are flat plate-shaped terminals standing from portions thereof connected to the positive-electrode wiring conductor, the bridge wiring conductor, and the negative-electrode wiring conductor, respectively, in a direction normal to the front surface of the insulating plate.
17. The half-bridge power semiconductor module according to claim 16 , wherein the high-side terminal, the bridge terminal, and the low-side terminal are parallel to each other.
18. The half-bridge power semiconductor module according to claim 16 , wherein
the high-side terminal and the low-side terminal each include a flat plate-shaped base portion standing in the direction normal to the front surface of the insulating plate, and a plurality of tooth portions branching from the base portion, and
tips of the plurality of tooth portions are connected to the corresponding one of the positive-electrode wiring conductor or the negative-electrode wiring conductor.
19. The half-bridge power semiconductor module according to claim 9 , wherein the gate-signal terminal and the source-signal terminal are flat plate-shaped terminals standing from the gate-signal wiring conductor and the source-signal wiring conductor, respectively, in a direction normal to the front surface of the insulating plate.
20. The half-bridge power semiconductor module according to claim 19 , wherein the gate-signal terminal and the source-signal terminal are parallel to each other.
21. A method of manufacturing a half-bridge power semiconductor module including
an insulating wiring board including
an insulating plate having a single-layer structure, and having a front surface and a back surface, and
a positive-electrode wiring conductor, a bridge wiring conductor, and a negative-electrode wiring conductor arranged on or above the front surface of the insulating plate in such a way as to be electrically insulated from each other,
at least one high-side power semiconductor device with a back-surface electrode thereof joined to a front side of the positive-electrode wiring conductor,
at least one low-side power semiconductor device with a back-surface electrode thereof joined to a front side of the bridge wiring conductor,
a bridge terminal connected to the bridge wiring conductor between the high-side power semiconductor device and the low-side power semiconductor device,
a high-side terminal connected to the positive-electrode wiring conductor between the high-side power semiconductor device and the bridge terminal,
a low-side terminal connected to the negative-electrode wiring conductor between the bridge terminal and the low-side power semiconductor device,
high-side connection means for connecting a front-surface electrode of the high-side power semiconductor device and the bridge wiring conductor, and
low-side connection means for connecting a front-surface electrode of the low-side power semiconductor device and the negative-electrode wiring conductor,
the negative-electrode wiring conductor being surrounded by the bridge wiring conductor with a clearance therebetween as viewed from a direction normal to the front surface of the insulating plate,
the high-side terminal, the bridge terminal, and the low-side terminal being flat plate-shaped terminals standing from portions thereof connected to the positive-electrode wiring conductor, the bridge wiring conductor, and the negative-electrode wiring conductor, respectively, in the direction normal to the front surface of the insulating plate,
the method comprising:
preparing the insulating wiring board, which includes the positive-electrode wiring conductor, the bridge wiring conductor, and the negative-electrode wiring conductor, the high-side power semiconductor device, and the low-side power semiconductor device;
joining the back-surface electrode of the high-side power semiconductor device to the front side of the positive-electrode wiring conductor;
joining the back-surface electrode of the low-side power semiconductor device to the front side of the bridge wiring conductor;
connecting the front-surface electrode of the high-side power semiconductor device and the bridge wiring conductor by using the high-side connection means;
connecting the front-surface electrode of the low-side power semiconductor device and the negative-electrode wiring conductor by using the low-side connection means;
connecting the bridge terminal to the bridge wiring conductor;
connecting the high-side terminal to the positive-electrode wiring conductor; and
connecting the low-side terminal to the negative-electrode wiring conductor.
22. A half-bridge power semiconductor module comprising:
an insulating wiring board including
an insulating plate having a single-layer structure, and having a front surface and a back surface, and
a positive-electrode wiring conductor, a bridge wiring conductor, and a negative-electrode wiring conductor arranged on or above the front surface of the insulating plate in such a way as to be electrically insulated from each other;
at least one high-side power semiconductor device with a back-surface electrode thereof joined to a front side of the positive-electrode wiring conductor;
at least one low-side power semiconductor device with a back-surface electrode thereof joined to a front side of the bridge wiring conductor;
a bridge terminal connected to the bridge wiring conductor between the high-side power semiconductor device and the low-side power semiconductor device;
a high-side terminal connected to the positive-electrode wiring conductor between the high-side power semiconductor device and the bridge terminal;
a low-side terminal connected to the negative-electrode wiring conductor between the bridge terminal and the low-side power semiconductor device;
high-side wires connecting a front-surface electrode of the high-side power semiconductor device and the bridge wiring conductor; and
low-side wires for connecting a front-surface electrode of the low-side power semiconductor device and the negative-electrode wiring conductor,
the negative-electrode wiring conductor is surrounded by the bridge wiring conductor with a clearance therebetween as viewed from a direction normal to the front surface of the insulating plate.