Magnetoresistive wheatstone measuring bridge and angle sensor having at least two such measuring bridges
A magnetoresistive Wheatstone bridge includes two bridge branches connected in parallel between a supply potential Vb, wherein two series-connected resistor arrangements R 1 and R 3 or R 2 and R 4 are arranged in each bridge branch with an interposed measuring potential Vout. The resistor arrangements of the two bridge branches are situated diagonally opposite one another and at least two magnetoresistive resistor arrangements have a magnetically sensitive preferred direction. The preferred directions of diagonally opposing resistor arrangements of the bridge branches R 1 and R 4 or R 2 and R 3 differ by an angle other than 0° or 180°. An angle sensor includes at least two of the Wheatstone bridges offset by a predefined angle for determining an angular orientation of a magnetic field by a sine bridge and a cosine bridge. The measuring bridge reduces harmonics and optimizes resistance values, improving the accuracy of a phase-angle sensor signal and the sensor resolution.
1. Magnetoresistive Wheatstone bridge comprising two bridge branches connected in parallel between a supply potential Vb, two series-connected resistor arrangements R 1 and R 3 or R 2 and R 4 arranged in each bridge branch with an interposed measuring potential Vout, and the resistor arrangements R 1 and R 4 or R 2 and R 3 of the two bridge branches being diagonally opposite and at least two magnetoresistive resistor arrangements R 1 , R 2 , R 3 , R 4 having a magnetically sensitive preferred direction, the preferred directions of diagonally opposing magnetoresistive resistor arrangements of the bridge branches R 1 and R 4 or R 2 and R 3 differing from one another by an angle other than 0° or 180, wherein the preferred directions of the series-connected resistor arrangements R 1 and R 3 or R 2 and R 4 of each bridge branch are oriented antiparallel, or the preferred directions of the resistor arrangements R 1 and R 2 or R 3 and R 4 situated opposite one another in pairs in the bridge branches are oriented nonparallel.
2. Wheatstone bridge according to claim 1 , wherein the resistance behaviour of each resistor arrangement R 1 , R 2 , R 3 , R 4 have identical magnitude.
3. Wheatstone bridge according to claim 1 , wherein the resistor arrangements are AMR, GMR, or TMR resistor arrangements, which are arranged on a chip substrate.
4. A Wheatstone bridge according to claim 1 , wherein each resistor arrangement R 1 , R 2 , R 3 , R 4 comprises a magnetoresistive resistor with a preferred direction, wherein the preferred directions of diagonal opposing resistor arrangements of the bridge branches R 1 and R 4 or R 2 and R 3 differ by an angle α from one another, by an angle α=60°.
5. Wheatstone bridge according to claim 1 , wherein each resistor arrangement R 1 , R 2 , R 3 , R 4 comprises at least two magnetoresistive resistors RX 1 , RX 2 with preferred directions offset relative to one another by an angle α 2 or by further angles, wherein the resultant preferred directions of diagonally opposing resistor arrangements of the bridge branches R 1 and R 4 or R 2 and R 3 differ from one another by an angle α 1 , wherein α 1 =60° and α 2 =30° or α 2 =36°.
6. Wheatstone bridge according to claim 1 , wherein at least in a resistor arrangement R 1 , R 2 , R 3 or R 4 , a trimming resistor RXT is series-connected which is selected so as to result in a resistance behaviour identical with regard to magnitude of the resistor arrangements R 1 , R 2 , R 3 and R 4 .
7. Wheatstone bridge according to claim 1 , wherein the trimming resistor is a magnetoresistive resistor which has a trimming resistor preferred direction.
8. Wheatstone bridge according to claim 7 , wherein the trimming resistor preferred direction is orientable in the direction of a preferred direction of one resistor of the resistor arrangement, in the direction of the resultant preferred direction of the resistor arrangement or in the direction of the overall preferred direction of the Wheatstone bridge.
9. Wheatstone bridge according to claim 6 , wherein the trimming resistor comprises a concatenation of at least two tunnel resistors between top electrodes and bottom electrodes, wherein the trimming resistor is adjustable by electrode interruption or electrode short-circuit of the top electrode or of the bottom electrode.
10. Wheatstone bridge according to claim 6 , wherein the trimming resistor comprises a plurality of tunnel resistors, wherein the number of parallel branches and/or series resistors of each parallel branch is adjustable.
11. Magnetoresistive Wheatstone bridge comprising two bridge branches connected in parallel between a supply potential Vb, two series-connected resistor arrangements R 1 and R 3 or R 2 and R 4 arranged in each bridge branch with an interposed measuring potential Vout, and the resistor arrangements R 1 and R 4 or R 2 and R 3 of the two bridge branches being diagonally opposite and at least two magnetoresistive resistor arrangements R 1 , R 2 , R 3 , R 4 having a magnetically sensitive preferred direction, the preferred directions of diagonally opposing magnetoresistive resistor arrangements of the bridge branches R 1 and R 4 or R 2 and R 3 differing from one another by an angle other than 0° or 180, wherein the preferred directions of the series-connected resistor arrangements R 1 and R 3 or R 2 and R 4 of each bridge branch are oriented antiparallel, or the preferred directions of the resistor arrangements R 1 and R 2 or R 3 and R 4 situated opposite one another in pairs in the bridge branches are oriented nonparallel;
an angle sensor, wherein the angle sensor comprises at least two magnetoresistive Wheatstone bridges offset by 90°, according to claim 1 , for determining an angular orientation of a magnetic field by a sine bridge and a cosine bridge.
12. Wheatstone bridge according to claim 11 , wherein resistor arrangements RX 1 , RX 2 of the first bridge branch R 1 R 3 of the first sensor bridge and the second sensor bridge are arranged spatially adjacently on a chip substrate, and resistor arrangements RX 1 , RX 2 of the second bridge branch R 2 R 4 of the first sensor bridge and of the second sensor bridge are arranged spatially adjacently on the chip substrate, and the first and second bridge branches R 1 -R 3 and R 2 -R 4 are arranged diagonally relative to one another on the chip substrate.