Optoelectronic component having a layer with lateral offset inclined side surfaces

1. An optoelectronic component comprising:

a layer structure comprising an active zone for generating an electromagnetic radiation, wherein the active zone is arranged in a first plane, wherein a recess is introduced into a surface of the layer structure, wherein the recess extends along a longitudinal z-axis and adjoins an end face of the component, wherein the end face constitutes an emission face or a mirror face at which the electromagnetic radiation is reflected or output, wherein the end face is arranged in a second plane, wherein the second plane is arranged substantially perpendicularly to the first plane and transversely to the longitudinal z-axis, wherein the recess comprises a bottom face and a side face, wherein the side face is arranged substantially perpendicularly to the end face, wherein the side face is arranged in a manner inclined at an angle not equal to 90° with respect to the plane of the active zone, wherein the bottom face is arranged in a region of the first plane of the active zone, wherein the side face of the recess comprises a stepped shape comprising at least two side sections, wherein the side sections are arranged in a laterally offset fashion, wherein the side sections are connected to one another via a second bottom face, and wherein at least one side section is formed as an inclined side face.

2. The component according to claim 1 , wherein an upper side section is formed as an inclined side face.

3. The component according to claim 2 , wherein the lower side section is substantially perpendicularly arranged compared to a plane of the active zone.

4. The component according to claim 1 , wherein a lower side section is formed as an inclined side face.

5. The component according to claim 1 , wherein the bottom face is arranged at a depth of between 100 nm and 800 nm below a surface of the layer structure.

6. The component according to claim 1 , wherein the side face is arranged in a manner inclined at an angle of 95°-160°, in particular between 98° and 130°.

7. The component according to claim 1 , wherein the side face is a first side face, wherein the recess comprises a second side face, and wherein the second side face is arranged opposite with respect to the first side face.

8. The component according to claim 7 , wherein the first and second side faces are arranged at different angles.

9. The component according to claim 1 , wherein the side face comprises a face section arranged substantially perpendicularly relative to the first plane, and an inclined face section, wherein the inclined face section of the side face is arranged in an upper face section of the side face in relation to a depth of the side face, and wherein the face section arranged substantially perpendicularly is arranged in a lower region of the side face.

10. The component according to claim 1 , wherein the side face comprises a face section arranged substantially perpendicularly relative to the first plane, and an inclined face section, wherein the inclined face section of the side face is arranged in a lower face section of the side face in relation to a depth of the side face, and wherein the face section arranged substantially perpendicularly is arranged in an upper region of the side face.

11. The component according to claim 1 , wherein the recess comprises, in a plane parallel to the second plane, at least one rounded transition between the side face of the recess and a top side of the layer structure and/or a bottom face of the recess.

12. The component according to claim 1 , wherein the recess comprises a width in the second plane that is in a range of 10 μm to 200 μm.

13. The component according to claim 1 , wherein a ridge is arranged on the layer structure, wherein the ridge is aligned along a z-axis, wherein the ridge is configured to concentrate a laser light below the ridge in a laser mode region, wherein the recess comprises a distance from the ridge that is in a range of 10 μm to 150 μm.

14. The component according to claim 1 , wherein a mesa trench is provided, wherein the mesa trench is arranged in the second plane in a laterally offset fashion with respect to the recess between a side of the component and the recess.

15. A method for producing the component according to claim 1 , the method comprising:

introducing the recess into the layer structure applying an etching process; and

laterally widening an etching opening of an etching mask while applying the etching process, such that the recess is introduced into the layer structure, wherein the etching process forms the recess comprising at least one inclined side face.

16. The method according to claim 15 , further comprising using etching masks with different hardnesses thereby producing the recess comprising the at least one inclined side face.

17. The method according to claim 15 , wherein a softer etching mask is a mask composed of photoresist, SiNx, a semiconductor material or a metal.

18. The method according to claim 17 , further comprising partially laterally removing the softer etching mask.

19. The component according to claim 1 , wherein the bottom face is arranged in a region between 200 nm above and 200 nm below the first plane of the active zone.

20. The component according to claim 1 , wherein a ridge is arranged on the layer structure, wherein the ridge is aligned along the z-axis, wherein the ridge is configured to concentrate a laser light below the ridge in a laser mode region, and wherein the ridge extends to the end face and forms a part of the end face, wherein the end face is a cleavage edge.