Solid-state imaging device
The present invention intends to provide a solid-state imaging device having minimum production costs and high detection accuracy. A solid-state imaging device includes a first optical layer that transmits visible light and at least a part of near-infrared light, a second optical layer that absorbs at least a part of the near-infrared light and a pixel array that includes a first light-receiving element that detects the visible light transmitted through the first optical layer and the second optical layer and a second light-receiving element that detects the near-infrared light transmitted through the first optical layer, in which the second optical layer has an opening at a part corresponding to the second light-receiving element, the first optical layer includes a compound (A) having at least one absorption maximum at the wavelength of from 750 to 900 nm, the second optical layer includes a compound (B) having at least one absorption maximum at the wavelength of from 755 to 1050 nm, an absorption maximum wavelength on a longest wavelength side of the compound (B) is larger than an absorption maximum wavelength on the longest wavelength side of the compound (A), and a difference between both is from 5 to 150 nm.
1. A solid-state imaging device comprising:
a first optical layer that transmits visible light and at least a part of near-infrared light;
a second optical layer that absorbs at least a part of the near-infrared light; and
a pixel array that includes a first light-receiving element that detects the visible light transmitted through the first optical layer and the second optical layer and a second light-receiving element that detects the near-infrared light transmitted through the first optical layer,
wherein the second optical layer has an opening at a part corresponding to the second light-receiving element;
the first optical layer includes a compound (A) having at least one absorption maximum at the wavelength of from 600 to 900 nm;
the second optical layer includes a compound (B) having at least one absorption maximum at the wavelength of from 755 to 1050 nm; and
an absorption maximum wavelength on a longest wavelength side of the compound (B) is larger than an absorption maximum wavelength on the longest wavelength side of the compound (A), and a difference between both is from 5 to 150 nm.
2. The solid-state imaging device according to claim 1 , wherein the second optical layer absorbs at least a part of the near-infrared light transmitted through the first optical layer.
3. The solid-state imaging device according to claim 1 , wherein the first optical layer includes a translucent resin composition containing the compound (A).
4. The solid-state imaging device according to claim 1 , wherein the second optical layer includes a curable resin composition containing the compound (B).
5. The solid-state imaging device according to claim 1 , wherein the compound (A) includes a coloring material that absorbs at least a part of the near-infrared light.
6. The solid-state imaging device according to claim 1 , wherein the compound (B) has an absorption maximum at the wavelength of from 820 to 880 nm.
7. The solid-state imaging device according to claim 1 , wherein the compound (A) includes at least one kind of compound selected from the group consisting of squarylium-based compounds, phthalocyanine-based compounds, naphthalocyanine-based compounds, croconium-based compounds, hexaphyrin-based compounds and cyanine-based compounds.
8. The solid-state imaging device according to claim 1 , wherein the compound (B) includes at least one kind of compound selected from the group consisting of diiminium-based compounds, squarylium-based compounds, cyanine-based compounds, phthalocyanine-based compounds, naphthalocyanine-based compounds, quaterrylene-based compounds, aminium-based compounds, iminium-based compounds, azo-based compounds, anthraquinone-based compounds, porphyrine-based compounds, pyrrolopyrrole-based compounds, oxonol-based compounds, croconium-based compounds, hexaphyrin-based compounds, metal dithiol-based compounds, and copper compounds.