Solid-state image pickup device and electronic apparatus
The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.
1. A solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, wherein
in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels;
wherein in the normal pixel, an individual on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal of the image is formed for each normal pixel; and
wherein all pixels including a color filter having selective sensitivity to a particular wavelength of three or more kinds of different wavelengths are the phase-difference detection pixels, and an output of the phase-difference detection pixel are also used as a pixel signal of an image.
2. The solid-state image pickup device according to claim 1 ,
an inter-pixel light-shielding structure is provided between the normal pixel and the normal pixel and between the normal pixel and the phase-difference detection pixel.
3. The solid-state image pickup device according to claim 2 , wherein
an inter-pixel light-shielding structure is also provided between the phase-difference detection pixel and the phase-difference detection pixel.
4. The solid-state image pickup device according to claim 1 , wherein
the phase-difference detection pixel includes an opening light-shielding structure that limits an opening of the photoelectric converter.
5. The solid-state image pickup device according to claim 1 , wherein
in the phase-difference detection pixel, the shared on-chip lens is formed for every two adjacent pixels.
6. The solid-state image pickup device according to claim 1 , wherein
in the phase-difference detection pixel, two shared on-chip lenses are formed for every three adjacent pixels.
7. The solid-state image pickup device according to claim 1 , wherein
a boundary between the individual on-chip lens formed in the normal pixel and the shared on-chip lens formed in the phase-difference detection pixel is approximately rectangular or approximately hexagonal.
8. The solid-state image pickup device according to claim 1 , wherein
a dummy light-condensing element structure is formed between the individual on-chip lens formed in the normal pixel and the shared on-chip lens formed in the plurality of adjacent phase-difference detection pixels.
9. The solid-state image pickup device according to claim 8 , wherein
the dummy light-condensing element structure is formed non-symmetrically with respect to the plurality of phase-difference detection pixels that share the shared on-chip lens.
10. The solid-state image pickup device according to claim 1 , wherein
the plurality of phase-difference detection pixels that share the shared on-chip lens are arranged in a checkerboard pattern.
11. The solid-state image pickup device according to claim 1 , wherein
the phase-difference detection pixel is linearly arranged in at least either one of a row direction and a column direction.
12. The solid-state image pickup device according to claim 1 , wherein
the phase-difference detection pixel is arranged in a stripe pattern in at least either one of a row direction and a column direction.
13. The solid-state image pickup device according to claim 12 , wherein
the phase-difference detection pixels arranged in stripes adjacent to each other in the stripe form have phases shifted from each other.
14. The solid-state image pickup device according to claim 1 , wherein
a color filter having selective sensitivity to three or more kinds of different wavelengths is provided for each pixel, and
the plurality of phase-difference detection pixels that share the shared on-chip lens include the color filter having selective sensitivity to a same wavelength.
15. The solid-state image pickup device according to claim 1 , wherein
a color filter having selective sensitivity to three or more kinds of different wavelengths is provided for pixel, and
the plurality of phase-difference detection pixels that share the shared on-chip lens include the color filter having selective sensitivity to different wavelengths.
16. The solid-state image pickup device according to claim 1 , wherein
the phase-difference detection pixel has a pixel size larger than that of the normal pixel.
17. The solid-state image pickup device according to claim 1 , wherein
the phase-difference detection pixel that shares the shared on-chip lens has a size that is an integer multiple of that of the normal pixel,
the photoelectric converter of the phase-difference detection pixel is divided into a plurality of regions including a central region from which a same oblique incidence characteristic as a photoelectric converter of the normal pixel is obtained, and
an output of the central region is also used as a pixel signal of an image.
18. The solid-state image pickup device according to claim 17 , wherein
the phase-difference detection pixel that shares the shared on-chip lens has a size that is twice as large as that of the normal pixel,
the photoelectric converter of the phase-difference detection pixel is divided into three regions at approximately 0.5:1:0.5, and
an output of the region corresponding to 1 of the ratio is also used as a pixel signal of an image.
19. The solid-state image pickup device according to claim 17 , wherein
the phase-difference detection pixel that shares the shared on-chip lens has a size that is twice as large as that of the normal pixel,
the photoelectric converter of the phase-difference detection pixel is divided into four regions at approximately 0.5:0.5:0.5:0.5, and
an addition value of outputs of the regions respectively corresponding to 0.5 and 0.5 at a center of the ratio is also used as a pixel signal of an image.