Optical semiconductor device
Provided is an optical semiconductor device including a laminate structural body 20 in which an n-type compound semiconductor layer 21 , an active layer 23 , and a p-type compound semiconductor layer 22 are laminated in this order. The active layer 23 includes a multiquantum well structure including a tunnel barrier layer 33 , and a compositional variation of a well layer 31 2 adjacent to the p-type compound semiconductor layer 22 is greater than a compositional variation of another well layer 31 1 . Band gap energy of the well layer 31 2 adjacent to the p-type compound semiconductor layer 22 is smaller than band gap energy of the other well layer 31 1 . A thickness of the well layer 31 2 adjacent to the p-type compound semiconductor layer 22 is greater than a thickness of the other well layer 31 1 .
1. An optical semiconductor device, comprising:
a laminate structural body that comprises an n-type compound semiconductor layer, an active layer, and a p-type compound semiconductor layer,
wherein the n-type compound semiconductor layer, the active layer, and the p-type compound semiconductor layer are in an arrangement order, and
wherein the active layer includes:
a multiquantum well structure including a first well layer, a first tunnel barrier layer, a first barrier layer, a second tunnel barrier layer, and a second well layer,
wherein the first barrier layer is between the first tunnel barrier layer and the second tunnel barrier layer,
wherein a first compositional variation of the first well layer is greater than a second compositional variation of the second well layer, and
wherein the first well layer is adjacent to the p-type compound semiconductor layer.
2. The optical semiconductor device according to claim 1 ,
wherein a first band gap energy of the first well layer is smaller than a second band gap energy of the second well layer.
3. The optical semiconductor device according to claim 1 ,
wherein a first thickness of the first well layer is greater than a second thickness of the second well layer.
4. The optical semiconductor device according to claim 3 ,
wherein a first band gap energy of the first well layer is smaller than a second band gap energy of the second well layer.
5. The optical semiconductor device according to claim 1 ,
wherein the first tunnel barrier layer is between the first well layer and the first barrier layer, and
wherein the second tunnel barrier layer is between the second well layer and the first barrier layer.
6. An optical semiconductor device, comprising:
a laminate structural body including an n-type compound semiconductor layer, an active layer, and a p-type compound semiconductor layer,
wherein the n-type compound semiconductor layer, the active layer, and the p-type compound semiconductor layer are in an arrangement order, and
wherein the active layer includes:
a multiquantum well structure including a first well layer, a first tunnel barrier layer, a first barrier layer, a second tunnel barrier layer, and a second well layer,
wherein the first barrier layer is between the first tunnel barrier layer and the second tunnel barrier layer,
wherein a first band gap energy of the first well layer is smaller than a second band gap energy of the second well layer, and
wherein the first well layer is adjacent to the p-type compound semiconductor layer.
7. The optical semiconductor device according to claim 6 ,
wherein a first thickness of the first well layer is greater than a second thickness of the second well layer.
8. The optical semiconductor device according to claim 6 ,
wherein the first tunnel barrier layer is between the first well layer and the first barrier layer, and
wherein the second tunnel barrier layer is between the second well layer and the first barrier layer.
9. An optical semiconductor device, comprising:
a laminate structural body including an n-type compound semiconductor layer, an active layer, and a p-type compound semiconductor layer,
wherein the n-type compound semiconductor layer, the active layer, and the p-type compound semiconductor layer are in an arrangement order, and
wherein the active layer includes:
a multiquantum well structure including a first well layer, a first tunnel barrier layer, a first barrier layer, a second tunnel barrier layer, and a second well layer,
wherein the first barrier layer is between the first tunnel barrier layer and the second tunnel barrier layer,
wherein a first thickness of the first well layer is greater than a second thickness of the second well layer, and
wherein the first well layer is adjacent to the p-type compound semiconductor layer.
10. The optical semiconductor device according to claim 9 ,
wherein the first tunnel barrier layer is between the first well layer and the first barrier layer, and
wherein the second tunnel barrier layer is between the second well layer and the first barrier layer.
11. The optical semiconductor device according to claim 1 ,
wherein each of a first thickness of the first tunnel barrier layer and a second thickness of the second tunnel barrier layer is one of equal to 4 nm or less than 4 nm.
12. The optical semiconductor device according to claim 1 ,
wherein the active layer comprises an AlInGaN-based compound semiconductor.
13. The optical semiconductor device according to claim 12 ,
wherein each of the first tunnel barrier layer and the second tunnel barrier layer comprises GaN.
14. The optical semiconductor device according to claim 12 ,
wherein the n-type compound semiconductor layer is on a c-surface of a GaN substrate.
15. The optical semiconductor device according to claim 12 ,
wherein an emission wavelength of the optical semiconductor device is one of equal to 440 nm or greater than 440 nm.