OXIDE DIELECTRIC, METHOD OF MANUFACTURING THE SAME, PRECURSOR OF OXIDE DIELECTRIC, SOLID STATE ELECTRIC DEVICE, AND METHOD OF MANUFACTURING THE SAME
[Problem] Provided is an oxide dielectric having superior properties, and a solid state electronic device (for example, a high pass filter, a patch antenna, a capacitor, a semiconductor device, or a microelectromechanical system) including the oxide dielectric. [Solution] The oxide layer 30 according to the present invention includes an oxide (possibly including inevitable impurities) consisting essentially of bismuth (Bi) and niobium (Nb) and having a crystal phase of the pyrochlore-type crystal structure, in which the number of atoms of the above niobium (Nb) is 1.3 or more and 1.7 or less when the number of atoms of the above bismuth (Bi) is assumed to be 1.
1 . An oxide dielectric, comprising an oxide (possibly including inevitable impurities) consisting essentially of bismuth (Bi) and niobium (Nb), and having a crystal phase of the pyrochlore-type crystal structure,
wherein the number of atoms of the niobium (Nb) is 1.3 or more and 1.7 or less when the number of atoms of the bismuth (Bi) is assumed to be 1.
2 . The oxide dielectric according to claim 1 , wherein the oxide further comprises an oxide consisting essentially of the bismuth (Bi) and the niobium (Nb) and having an amorphous phase.
3 . The oxide dielectric according to claim 1 , wherein the oxide is formed by heating a precursor under an oxygen-containing atmosphere, the precursor being prepared using a precursor solution as a starting material, the precursor solution comprising, as solutes, a precursor containing the bismuth (Bi) and a precursor containing the niobium (Nb) in which the number of atoms of the niobium (Nb) is 1.3 or more and 1.7 or less when the number of atoms of the bismuth (Bi) is assumed to be 1.
4 . A solid state electronic device, comprising the oxide dielectric according to claim 1 .
5 . The solid state electronic device according to claim 4 , wherein the solid state electronic device is selected from the group consisting of high frequency filters, patch antennas, capacitors, semiconductor devices, and microelectromechanical systems.
6 . A method of manufacturing an oxide dielectric, comprising a step of heating a precursor layer under an oxygen-containing atmosphere at a first temperature of 520° C. to 620° C., the precursor layer being prepared using a precursor solution as a starting material, the precursor solution containing, as solutes, a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) in which the number of atoms of the niobium (Nb) is 1.3 or more and 1.7 or less when the number of atoms of the bismuth (Bi) is assumed to be 1,
to form an oxide dielectric layer comprising an oxide (possibly including inevitable impurities) consisting essentially of the bismuth (Bi) and the niobium (Nb) and having a crystal phase of the pyrochlore-type crystal structure in which the number of atoms of the niobium (Nb) is 1.3 or more and 1.7 or less when the number of atoms of the bismuth (Bi) is assumed to be 1.
7 . The method of manufacturing an oxide dielectric according to claim 6 , wherein the oxide further comprises an oxide consisting essentially of the bismuth (Bi) and the niobium (Nb) and having an amorphous phase.
8 . The method of manufacturing an oxide dielectric according to claim 6 , further comprising an additional heating step of heating the precursor layer at a second temperature equal to or lower than the first temperature after heating under the oxygen-containing atmosphere.
9 . The method of manufacturing an oxide dielectric according to claim 6 , comprising imprinting the precursor layer while heating the precursor layer at 80° C. or more and 300° C. or less under an oxygen-containing atmosphere to form an imprinted structure at the precursor layer before forming the oxide dielectric layer.
10 . The method of manufacturing an oxide dielectric according to claim 9 , comprising performing the imprinting at a pressure in the range of 1 MPa or more and 20 MPa or less.
11 . A method of manufacturing a solid state electronic device, wherein the solid state electronic device comprises the oxide dielectric according to claim 6 .
12 . A precursor of an oxide dielectric, which is a precursor of an oxide consisting essentially of bismuth (Bi) and niobium (Nb) and having a crystal phase of the pyrochlore-type crystal structure,
wherein the precursor comprises mixed solutes of a precursor containing the bismuth (Bi) and a precursor containing the niobium (Nb) in which the number of atoms of the niobium (Nb) is 1.3 or more and 1.7 or less when the number of atoms of the bismuth (Bi) is assumed to be 1.