Quality inspection of thin film materials
Devices and methods for determining the quality thin film materials are disclosed. The thin film materials are provided on substrates forming thin film material structures. The devices comprise a housing, a THz module with a THz source emitter and a THz detector, and a reflective base moveable relative to the THz module and configured to support the thin film material structures. The THz source emitter is configured to irradiate the thin film materials. The THz detector is configured to measure at least one reflection of the irradiation. The device is configured to calculate a parameter indicative of the quality of the thin film material based on said reflection measurements.
1. A method to determine the quality of a thin film material by calculating its conductivity, the thin film material provided on a substrate, the thin film material and the substrate forming a thin film material structure, the method comprising:
placing the thin film material structure on a device, the device comprising a THz source emitter, a THz detector and a reflective base configured to support the thin film material structure,
the THz source emitter irradiating the thin film material,
the THz detector measuring a single reflected signal comprising a first reflection from the thin film material and a top surface of the substrate, and a second reflection from a back surface of the substrate after having been passed twice through the thin film material and the substrate, and
calculating the conductivity of the thin film material as a function of the first and second reflections.
2. The method according to claim 1 , further comprising calculating a parameter indicative of a quality of the thin film material as a function of the calculated conductivity.
3. The method according to claim 1 , wherein the THz source emitter and the THz detector are integrated in a single THz source/detector module and wherein irradiation and reflection directions overlap.
4. The method according to claim 1 , wherein the THz source emitter and the THz detector are separated apart and wherein irradiation is oblique with an angle of incidence α.
5. The method according to claim 1 , wherein the thin film material comprises an atomically thin material.
6. The method according to claim 1 , wherein the thin film material comprises graphene.
7. The method according to claim 1 , wherein the thin film material comprises a transition metal dichalcogenide or a transition metal oxide.
8. A method of determining the quality of a thin film material by calculating its conductivity, the thin film material provided on a dielectric substrate forming a thin film material structure, the method comprising:
providing the thin film material structure on a reflective base;
irradiating the thin film material structure with a THz source emitter;
measuring a single reflected signal comprising a first reflection from the thin film material and from a top surface of the dielectric substrate and a second reflection from a bottom surface of the dielectric substrate after having passed twice through the thin film material and the dielectric substrate; and
calculating the conductivity of the thin film material as a function of the first and second reflections.
9. The method according to claim 8 , further comprising
measuring the first and second reflections at a plurality of points of the thin film material;
calculating the conductivity of the thin film material at the plurality of points; and
generating a conductivity map of the thin film material.
10. The method according to claim 8 , further comprising exposing the thin film material structure to one or more external forces, processes, and/or electromagnetic radiation, to modify physical or chemical properties of the thin film material and/or of the substrate, to enhance at least one characteristic of the thin film material and/or of the substrate to facilitate the calculation of the conductivity.
11. The method according to claim 10 , wherein the one or more external forces is one or more of an external electric field, voltage source and/or current source and the at least one characteristic is the distribution of positive or negative free charge carriers in selected areas of the thin film structure.
12. A computing device comprising a memory and a processor, wherein the memory stores computer program instructions executable by the processor, the instructions comprising functionality to execute a method of determining the quality of a thin film material by calculating its conductivity according to claim 8 .
13. A computer program product comprising instructions to ensure that a computing device implements a method of determining the quality of a thin film material by calculating its conductivity according to claim 8 .
14. A method of determining the quality of a thin film material by calculating its conductivity, the thin film material provided on a dielectric substrate forming a thin film material structure, the method comprising:
providing the thin film material structure on a reflective base;
irradiating the thin film material structure with a THz source emitter;
measuring a first signal reflected from the thin film material and from the dielectric substrate;
measuring a second signal reflected from the reflective base after having passed twice through the thin film and the dielectric substrate; and
calculating the conductivity of the thin film material as a function of the first and second reflected signals;
further comprising exposing the thin film material structure to one or more external forces, processes, and/or electromagnetic radiation, to modify physical or chemical properties of the thin film material and/or of the substrate, to enhance at least one characteristic of the thin film material and/or of the substrate to facilitate the calculation of the conductivity; and
wherein the one or more external forces is an external magnetic field produced by a magnetic fields emitter, on which the thin film material is formed.