Reflective mask blank, reflective mask and method of manufacturing semiconductor device
An object of the present invention is to obtain a reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 μm −1 is not more than 17 nm 4 .
1. A reflective mask blank comprising:
a multilayer reflective film; and
a phase shift film that shifts the phase of EUV light formed in that order on a substrate; wherein,
root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 μm −1 is not more than 17 nm 4 .
2. The reflective mask blank according to claim 1 , wherein a protective film is formed on the multilayer reflective film.
3. The reflective mask blank according to claim 1 , wherein the phase shift film has a tantalum-based material layer comprising tantalum and nitrogen and a chromium-based material layer comprising chromium and nitrogen on the tantalum-based material layer.
4. The reflective mask blank according to claim 3 , wherein the film thickness of the chromium-based material layer is 5 to 30 nm.
5. The reflective mask blank according to claim 2 , wherein the phase shift film has a tantalum-based material layer comprising tantalum and nitrogen and a chromium-based material layer comprising chromium and nitrogen on the tantalum-based material layer.
6. The reflective mask blank according to claim 5 , wherein the film thickness of the chromium-based material layer is 5 to 30 nm.
7. A reflective mask comprising:
a multilayer reflective film; and
a phase shift film pattern that shifts the phase of EUV light formed in that order on a substrate; wherein,
root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the phase shift film pattern with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 μm −1 is not more than 17 nm 4 .
8. The reflective mask according to claim 7 , wherein a protective film is formed on the multilayer reflective film.
9. The reflective mask according to claim 7 , wherein root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the multilayer reflective film with an atomic force microscope, is not more than 0.15 nm, and power spectrum density at a spatial frequency of 10 to 100 μm −1 is not more than 7 nm 4 .
10. The reflective mask according to claim 7 , wherein the difference between the power spectrum density on the surface of the phase shift film pattern and power spectrum density on the surface of the multilayer reflective film is not more than 10 nm 4 .
11. The reflective mask according to claim 8 , wherein root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the protective film with an atomic force microscope, is not more than 0.15 nm, and power spectrum density at a spatial frequency of 10 to 100 μm −1 is not more than 7 nm 4 .
12. The reflective mask according to claim 8 , wherein the difference between the power spectrum density on the surface of the phase shift film pattern and power spectrum density on the surface of the protective film is not more than 10 nm 4 .
13. The reflective mask according to claim 8 , wherein root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the multilayer reflective film with an atomic force microscope, is not more than 0.15 nm, and power spectrum density at a spatial frequency of 10 to 100 μm −1 is not more than 7 nm 4 .
14. The reflective mask according to claim 8 , wherein the difference between the power spectrum density on the surface of the phase shift film pattern and power spectrum density on the surface of the multilayer reflective film is not more than 10 nm 4 .
15. The reflective mask according to claim 9 , wherein the difference between the power spectrum density on the surface of the phase shift film pattern and power spectrum density on the surface of the multilayer reflective film is not more than 10 nm 4 .
16. A method of manufacturing a semiconductor device comprising:
carrying out a lithography process using an exposure device using a reflective mask to form a transfer pattern on a transferred substrate, the reflective mask comprising:
a multilayer reflective film; and
a phase shift film pattern that shifts the phase of EUV light formed in that order on a substrate; wherein,
root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the phase shift film pattern with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 μm −1 is not more than 17 nm 4 .
17. The method of claim 16 , wherein a protective film is formed on the multilayer reflective film.
18. The method of claim 16 , wherein root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the multilayer reflective film with an atomic force microscope, is not more than 0.15 nm, and power spectrum density at a spatial frequency of 10 to 100 μm −1 is not more than 7 nm 4 .
19. The method of claim 16 , wherein the difference between the power spectrum density on the surface of the phase shift film pattern and power spectrum density on the surface of the multilayer reflective film is not more than 10 nm 4 .