Semiconductor light emitting device and method for manufacturing same
The present disclosure relates to a semiconductor light emitting device and a method for manufacturing the same, in which the semiconductor light emitting device includes a semiconductor light emitting chip having a semiconductor light emitting part for generating light by electron-hole recombination, and at least one electrode electrically connected to the semiconductor light emitting part; a wall placed on a lateral side of the semiconductor light emitting part, with the wall having an elevated upper end caused by surface tension effects; and an encapsulant arranged in a bowl that is defined by the upper end of the wall and the semiconductor light emitting part, with the encapsulant for transmitting therethrough a light from the semiconductor light emitting part.
1. A method for manufacturing a semiconductor light emitting device, the method comprising:
placing a dam having an opening formed therein onto a base, and placing a semiconductor light emitting chip onto an exposed portion of the base through the opening, with the semiconductor light emitting chip having a semiconductor light emitting part for generating light by electron-hole recombination and at least one electrode electrically connected to the semiconductor light emitting part;
forming a wall comprising a light reflective material between a lateral side of the dam and a lateral side of the semiconductor light emitting part without the wall covering an upper side of the semiconductor light emitting part, the wall having an elevated upper end due to surface tension effects;
forming an encapsulant in a bowl defined by the upper end of the wall and the upper side of the semiconductor light emitting part, with the generated light transmitted to the encapsulant through the upper side of the semiconductor light emitting part; and
separating the base from the semiconductor light emitting chip, the dam and the wall in such a manner that the at least one electrode is exposed through the opening of the dam for electric contact.
2. The method according to claim 1 , wherein when forming the wall, the lateral side of the dam is inclined with respect to the base, and the upper end of the wall is formed as a light reflective material fed between the lateral side of the dam and the lateral side of the semiconductor light emitting part and arises along the lateral side of the dam due to surface tension effects.
3. The method according to claim 1 , wherein the upper end of the wall is formed, relative to the base, with the lateral side of the dam higher than the lateral side of the semiconductor light emitting part.
4. The method according to claim 1 , wherein the semiconductor light emitting chip is a flip chip, the at least one electrode comprises a first electrode and a second electrode disposed on an opposite side of the encapsulant with respect to the semiconductor light emitting part, and the method further comprises:
forming a first conductive part on a lower end of the wall to contact the first electrode, and a second conductive part on the lower end of the wall to contact the second electrode, respectively.
5. The method according to claim 4 , wherein when placing the dam and the semiconductor light emitting chip on the base, a plurality of semiconductor light emitting chips are placed in a single opening, and the wall is filled in a space between lateral sides of the semiconductor light emitting chips.
6. The method according to claim 4 , wherein:
when placing the dam and the semiconductor light emitting chip on the base, a flip chip-type functional element having two electrical terminals exposed to the first and second electrodes is placed together with the semiconductor light emitting chip in the opening; and
when forming a wall, at least a portion of the functional element is covered by the wall.