Oriented apatite-type doped rare earth silicate and/or germanate ion conductor and method for manufacturing same
In order to provide a novel oriented apatite-type oxide ion conductor which can achieve an increase in area through suppression of crack generation and preferably can be manufactured more inexpensively by an uncomplicated process, an oriented apatite-type oxide ion conductor composed of a composite oxide represented by A 9.33+x [T 6−y M y ]O 26.00+z A in the formula is one kind or two or more kinds of elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Ca, Sr, and Ba. T in the formula is an element including Si, Ge, or both of them. M in the formula is one kind or two or more kinds of elements selected from the group consisting of B, Ge, Zn, Sn, W, and Mo.
1. An oriented apatite-type oxide ion conductor comprising a composite oxide represented by A 9.33+x [T 6−y M y ]O 26.00+z , wherein A in the formula is one kind or two or more kinds of elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Sr, and Ba, T in the formula is an element including Si, Ge, or both of them, M in the formula is one kind or two or more kinds of elements selected from the group consisting of B, Zn, Sn, W, and Mo, wherein
x in the formula is from −1 to 1,
y in the formula is from 1 to 3,
z in the formula is from −2 to 2, and
a ratio (A/M) of the number of moles of A to the number of moles of M is from 3 to 10,
wherein said composite oxide has a degree of orientation measured by Lotgering method of 0.9 or more.
2. An electrode bonded body comprising a configuration obtained by laminating an electrode on both surfaces of the oriented apatite-type oxide ion conductor according to claim 1 .
3. A method for manufacturing an oriented apatite-type oxide ion conductor, the method comprising a vapor phase-solid phase diffusion step of
converting a precursor represented by A 2+x TO 5+z , wherein A in the formula is one kind or two or more kinds of elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Sr, and Ba, T in the formula is an element including Si, Ge, or both of them, x in the formula is from −1 to 1 and z is from −2 to 2, to have an apatite structure by heating the precursor in a gas phase containing an element M, wherein M is one kind or two or more kinds of elements selected from the group consisting of B, Ge, Zn, Sn, W, and Mo for a reaction of the precursor with the element M,
wherein said oriented apatite-type oxide ion conductor comprising a composite oxide represented by A 9.33+x [T 6−y M y ]O 26.00+z , wherein A in the formula is one kind or two or more kinds of elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Sr, and Ba, T in the formula is an element including Si, Ge, or both of them, M in the formula is one kind or two or more kinds of elements selected from the group consisting of B, Ge, Zn, Sn, W, and Mo,
wherein x in the formula is from −1 to 1,
y in the formula is from 1 to 3,
z in the formula is from −2 to 2, and
a ratio (A/M) of the number of moles of A to the number of moles of M is from 3 to 10, and
wherein said composite oxide has a degree of orientation measured by the Lotgering method is 0.9 or more.
4. The method for manufacturing an oriented apatite-type oxide ion conductor according to claim 3 , wherein the precursor represented by A 2+x TO 5+z is obtained by a manufacturing method including a step of heating a compound represented by the above formula A 2+x TO 5+z at from 1100° C. to 1700° C. to sinter the compound.
5. The method for manufacturing an oriented apatite-type oxide ion conductor according to claim 3 ,
wherein the precursor represented by A 2+x TO 5+z is heated at from 1000° C. to 1700° C. in the gas phase containing the element M in the vapor phase-solid phase diffusion step.
6. The method for manufacturing an oriented apatite-type oxide ion conductor according to claim 5 , wherein the precursor represented by A 2+x TO 5+z is obtained by a manufacturing method including a step of heating a compound represented by the above formula A 2+x TO 5+z at from 1100° C. to 1700° C. to sinter the compound.
7. The method for manufacturing an oriented apatite-type oxide ion conductor according to claim 3 ,
wherein the precursor represented by A 2+x TO 5+z and a compound containing the element M are placed in a container and heated to vaporize the compound containing the element M and thus to change an atmosphere in the container to a gas phase atmosphere containing the element M and the precursor is reacted with the element M in the vapor phase-solid phase diffusion step.
8. The method for manufacturing an oriented apatite-type oxide ion conductor according to claim 7 ,
wherein the precursor represented by A 2+x TO 5+z is heated at from 1000° C. to 1700° C. in the gas phase containing the element M in the vapor phase-solid phase diffusion step.
9. The method for manufacturing an oriented apatite-type oxide ion conductor according to claim 7 , wherein the precursor represented by A 2+x TO 5+z is obtained by a manufacturing method including a step of heating a compound represented by the above formula A 2+x TO 5+z at from 1100° C. to 1700° C. to sinter the compound.