Manufacturing method for an array substrate
Disclosed are an array substrate, a manufacturing method thereof, a sensor and a detection device. The array substrate includes: a base substrate; a thin-film transistor (TFT) being disposed on the base substrate and including a source electrode and an active layer; a passivation layer disposed on the TFT; a first metal layer disposed on the passivation layer; an insulating layer disposed on the first metal layer; a through hole structure running through the insulating layer, the first metal layer and the passivation layer; and a detection unit being disposed on the insulating layer and including a second metal layer, wherein the second metal layer makes direct contact with the source electrode via the through hole structure.
1. A method for manufacturing an array substrate, comprising:
forming a thin film transistor (TFT) on a base substrate, in which the TFT includes a source electrode and an active layer;
depositing a passivation layer film and a first metal layer film on the TFT in sequence;
forming a first metal layer, a passivation layer, and a first connecting hole and a recess disposed in the first metal layer and the passivation layer by performing a first patterning process on the first metal layer film and the passivation layer film, in which a part of the source electrode is exposed by the first connecting hole, and the first metal layer is disconnected at the recess to form different parts spaced from each other;
forming an insulating layer film on the first metal layer, the passivation layer, the first connecting hole and the recess, and forming a insulating layer pattern and a second connecting hole by a second patterning process, in which the first connecting hole and the second connecting hole are communicated with each other to form a through hole structure; and
forming a detection unit on the base substrate provided with the through hole structure, in which the detection unit includes a second metal layer which makes direct contact with the source electrode via the through hole structure.
2. The manufacturing method according to claim 1 , wherein in the first patterning process, the first metal layer film and the passivation layer film are etched by adoption of a first etching agent.
3. The manufacturing method according to claim 1 , wherein in the first patterning process, the first metal layer film and the passivation layer film are respectively etched by a second etching agent and a third etching agent.
4. The manufacturing method according to claim 1 , wherein the recess is disposed between the through hole structure and the active layer in a direction parallel to the base substrate.
5. The manufacturing method according to claim 1 , wherein a projection of the first metal layer on the base substrate is at least partially overlapped with a projection of the TFT on the base substrate.
6. The manufacturing method according to claim 1 , further comprising: forming a transparent conductive layer on the second metal layer.
7. The manufacturing method according to claim 6 , wherein the transparent conductive layer includes any one of ITO or IZO.