Sensor for measurements using Johnson noise in materials
A method of making measurements includes providing a sensor with at least one solid state electronic spin; irradiating the sensor with radiation from an electromagnetic radiation source that manipulates the solid state electronic spins to produce spin-dependent fluorescence, wherein the spin-dependent fluorescence decays as a function of relaxation time; providing a target material in the proximity of the sensor, wherein, thermally induced currents (Johnson noise) present in the target material alters the fluorescence decay of the solid state electronic spins as a function of relaxation time; and determining a difference in the solid state spins spin-dependent fluorescence decay in the presence and absence of the target material and correlating the difference with a property of the sensor and/or target material.
1. A method of making measurements, comprising:
providing a sensor with at least one solid state electronic spin;
irradiating the sensor with radiation from an electromagnetic radiation source that manipulates the solid state electronic spins to produce spin-dependent fluorescence,
wherein the spin-dependent fluorescence decays as a function of relaxation time;
providing a target material in the proximity of the sensor,
wherein, thermally induced currents (Johnson noise) present in the target material alters the fluorescence decay of the solid state electronic spins as a function of relaxation time; and
determining a difference in the solid state spins spin-dependent fluorescence decay in the presence and absence of the target material and correlating the difference with a property of the sensor and/or target material.
2. The method of claim 1 , wherein the property of the target material measured is localized at a length scale of 10-100 nm.
3. The method of claim 2 , wherein the property measured is the resistance values within the target material.
4. The method of claim 2 , wherein the property measured is the temperature of the target material.
5. The method of claim 1 , wherein the property measured is the distance of the target material from the surface of the sensor.
6. The method of claim 1 , wherein the property measured is the distance of the solid state electronic spins from the surface of the sensor.
7. The method of claim 1 , wherein, the sensor comprises a diamond crystal lattice.
8. The method of claim 7 , wherein, the solid state electronic spins comprises a defect in the diamond crystal lattice.
9. The method of claim 8 , wherein the defect comprises a nitrogen vacancy center in a diamond crystal lattice.
10. The method of claim 1 , wherein, the electromagnetic radiation source is a laser.
11. The method of claim 1 , wherein, the laser source emits a laser having wavelength of about 532 nanometers.
12. The method of claim 1 , wherein the target material is in contact with the sensor.
13. The method of claim 1 , wherein the target material is not in contact with the sensor.
14. The method of claim 1 , wherein the target material is a conductive material.
15. The method of claim 1 , wherein the target material is a metal.
16. The method of claim 1 , wherein the target material is silver.
17. The method of claim 1 , wherein the target material is copper.
18. The method of claim 1 , wherein the target material is a single crystal.
19. The method of claim 18 , wherein the single crystal is a silver single crystal.
20. The method of claim 1 , wherein the target material is polycrystalline.
21. The method of claim 1 , wherein the target material is a conductive polymer.