DVC utilizing MIMS in the anchor
The present disclosure generally relates to a MEMS DVC utilizing one or more MIM capacitors located in the anchor of the DVC and an Ohmic contact located on the RF-electrode. The MIM capacitor in combination with the ohmic MEMS device ensures that a stable capacitance for the MEMS DVC is achieved with applied RF power.
1. A DVC, comprising:
a substrate having at least one RF electrode and at least one anchor electrode disposed therein;
an insulating layer disposed on the at least one anchor electrode;
a conductive layer disposed on the insulating layer, wherein the at least one anchor electrode, insulating layer and conductive layer form a MIM capacitor; and
at least one MEMS bridge disposed over the substrate and coupled to the conductive layer, the at least one MEMS bridge movable from a position spaced a first distance from the RF electrode and a position spaced a second distance from the RF electrode that is less than the first distance, further comprising an ohmic contact layer disposed on the conductive layer.
2. The DVC of claim 1 , wherein the at least one MEMS bridge is coupled to the ohmic contact layer.
3. The DVC of claim 2 , wherein the insulating layer is at least partially disposed on the RF electrode.
4. The DVC of claim 3 , wherein at least a portion of the conductive layer is disposed on the RF electrode.
5. The DVC of claim 4 , wherein the ohmic contact layer comprises a material selected from the group consisting of W, Pt, Ir, Rh, Ru, RuO 2 , ITO and Mo.
6. The DVC of claim 1 , wherein the at least one anchor electrode comprises two anchor electrodes.
7. The DVC of claim 6 , wherein each anchor electrode has at least a portion of the insulating layer disposed thereon.
8. The DVC of claim 7 , wherein at least a portion of the conductive layer is disposed on each anchor electrode.
9. The DVC of claim 1 , wherein the at least one MEMS bridge comprises a plurality of MEMS bridge and wherein each MEMS bridge is coupled to the at least one anchor electrode.
10. The DVC of claim 9 , wherein each MEMS bridge is coupled to a distinct conductive layer.
11. A method of making a DVC, comprising:
forming a plurality of electrodes over a substrate, wherein at least one electrode is an anchor electrode and at least one electrode is an RF electrode;
depositing an insulating layer over the plurality of electrodes;
removing at least a portion of the insulating layer to expose at least a portion of the RF electrode;
depositing a conductive layer over the insulating layer and exposed RF electrode;
removing selected portions of the conductive layer;
forming an ohmic contact over a portion of the conductive layer; and
forming a MEMS bridge in contact with the ohmic contact.
12. The method of claim 11 , wherein the MEMS bridge is spaced from the RF electrode.
13. The method of claim 12 , wherein a first portion of the ohmic contact is disposed on the conductive layer that is in contact with the RF electrode.
14. The method of claim 13 , wherein MEMS bridge is spaced from the first portion of the ohmic contact.
15. The method of claim 14 , wherein a second portion of the ohmic contact is disposed on the insulating layer.
16. The method of claim 15 , wherein the MEMS bridge is in contact with the second portion of the ohmic contact.
17. The method of claim 16 , wherein the ohmic contact comprises a material selected from the group consisting of W, Pt, Ir, Rh, Ru, RuO 2 , ITO and Mo.