Optoelectronics semiconductor device and method for producing an optoelectronic semiconductor device

1. Optoelectronic semiconductor device having a multiplicity of radiation-generating elements which are arranged spaced from one another on a surface of a carrier element, wherein each of the radiation-generating elements adheres to the surface of the carrier element in each case in a region of a connection point and wherein the optoelectronic semiconductor device is free of a growth substrate, wherein

the optoelectronic semiconductor device comprises a first multiplicity of radiation-generating elements of a first type and a second multiplicity of radiation-generating elements of a second type, wherein the radiation-generating elements of the first type are configured to generate electromagnetic radiation of a first wavelength range, and wherein the radiation-generating elements of the second type are configured to generate electromagnetic radiation of a second wavelength range different from the first wavelength range, and

the carrier element comprises separately controllable conductor tracks, wherein each of the conductor tracks is associated with only one type of radiation-generating element.

2. Semiconductor device according to claim 1 , wherein each of the radiation-generating elements is attached to the surface of the carrier element through interaction of a key element arranged on a root area of the radiation-generating element and a lock element arranged in the region of the connection point.

3. Semiconductor device according to claim 1 , wherein each of the radiation-generating elements adheres to the surface of the carrier element through an action of a lock-and-key principle.

4. Semiconductor device according to claim 1 , wherein each of the radiation-generating elements is materially bonded to the surface of the carrier element in the region of the connection point.

5. Semiconductor device according to claim 1 , wherein each of the radiation-generating elements has a main direction of extension, a core region, which is formed with a first semiconductor material, an active layer, which covers the core region at least in directions transverse to the main direction of extension, and an outer layer, which is formed with a second semiconductor material and covers the active layer at least in directions transverse to the main direction of extension.

6. Semiconductor device according to claim 1 , wherein the radiation-generating elements are based on a nitride compound semiconductor material, the first semiconductor material is deposited epitaxially on the growth substrate, a growth direction of the first semiconductor material is substantially parallel a main direction of extension of the radiation-generating elements, and each of the radiation-generating elements has a length in the main direction of extension and a diameter in a plane perpendicular to the main direction of extension, wherein a ratio of length to diameter is at least three.

7. Semiconductor device according to claim 1 , wherein the surface of the carrier element is of non-planar configuration to enlarge an area thereof and comprises elements projecting out of a main plane of extension of the carrier element.

8. Semiconductor device according to claim 1 , wherein each of the radiation-generating elements is rod-shaped in a direction perpendicular to the surface of the carrier element and has a diameter of less than 10 μm.

9. Optoelectronic semiconductor device having a multiplicity of radiation-generating elements which are arranged spaced from one another on a surface of a carrier element, wherein each of the radiation-generating elements adheres to the surface of the carrier element in each case in a region of a connection point and wherein the optoelectronic semiconductor device is free of a growth substrate, wherein

the optoelectronic semiconductor device comprises a first multiplicity of radiation-generating elements of a first type and a second multiplicity of radiation-generating elements of a second type, wherein the radiation-generating elements of the first type are configured to generate electromagnetic radiation of a first wavelength range, and wherein the radiation-generating elements of the second type are configured to generate electromagnetic radiation of a second wavelength range different from the first wavelength range, and

the carrier element comprises separately controllable conductor tracks, wherein the conductor tracks are each associated with one type of radiation-generating element, wherein

each of the radiation-generating elements is attached to the surface of the carrier element through interaction of a key element arranged on a root area of the radiation-generating element and a lock element arranged in the region of the connection point, and

each of the radiation-generating elements of the first type comprises a key element of a first type and each of the radiation-generating elements of the second type comprises a key element of a second type, wherein the key elements of the first type are differently configured from the key elements of the second type, and wherein lock elements of a first type and a second type are respectively of complementary configuration to the key elements.

10. Semiconductor device according to claim 9 , wherein each of the radiation-generating elements is rod-shaped in a direction perpendicular to the surface of the carrier element and has a diameter of less than 10 μm.

11. Semiconductor device according to claim 9 , wherein the surface of the carrier element is of non-planar configuration to enlarge an area thereof and comprises elements projecting out of a main plane of extension of the carrier element.