Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
1. A secondary ion mass spectrometry (SIMS) system, comprising:
a sample stage;
a primary ion source and ion optics for producing and directing a primary ion beam to the sample stage;
an extraction lens directed at the sample stage, the extraction lens configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage; and
a magnetic sector spectrograph coupled to the extraction lens along an optical path of the SIMS system, the magnetic sector spectrograph comprising an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
2. The SIMS system of claim 1 , wherein the sample stage contains a Faraday cup.
3. The SIMS system of claim 1 , further comprising:
a plurality of detectors spaced along a plane of the magnetic sector spectrograph.
4. The SIMS system of claim 3 , wherein the plurality of detectors is for detecting a corresponding plurality of different species from a beam of the secondary ions emitted from the sample.
5. The SIMS system of claim 1 , further comprising:
a first additional ESA coupled along the optical path of the SIMS system, between the extraction lens and the ESA of the magnetic sector spectrograph; and
a second additional ESA coupled along the optical path of the SIMS system, between the first additional ESA and the ESA of the magnetic sector spectrograph.
6. The SIMS system of claim 5 , wherein the first additional ESA is configured to spread a beam of the secondary ions emitted from the sample, and wherein the second additional ESA is configured to concentrate the beam of the secondary ions received from the first additional ESA.
7. The SIMS system of claim 6 , further comprising:
one or more slits along the optical path of the SIMS system, between the first additional ESA and the second additional ESA.
8. The SIMS system of claim 7 , wherein the first additional ESA, the second additional ESA, and the one or more slits are included in a charge compensation system of the SIMS system.
9. The SIMS system of claim 5 , wherein the first additional BA and the second additional ESA together direct the optical path of the SIMS system from above the sample stage to below the sample.
10. The SIMS system of claim 9 , wherein a magnet of the MSA is located below the sample stage.
11. The SIMS system of claim 1 , wherein the low extraction field has an absolute value of at most approximately 10 Volts/mm.
12. The SIMS system of claim 1 , further comprising:
a transfer robot coupled to the sample stage.
13. The SIMS system of claim 12 , further comprising;
a receptacle coupled to the transfer robot, the receptacle being capable of containing calibration or reference wafers or wafer-like carriers capable of containing calibration or reference samples.