Imaging device having first, second and third electrodes with an insulating material and a photoelectric conversion layer and driving method for imaging device having the same, and electronic apparatus

1. An imaging device, comprising:

a substrate including a first photoelectric conversion unit; and

a second photoelectric conversion unit at a light-incident side of the substrate, the second photoelectric conversion unit including:

a photoelectric conversion layer;

a first electrode;

a second electrode above the photoelectric conversion layer;

a third electrode; and

an insulating material between the third electrode and the photoelectric conversion layer,

wherein a portion of the insulating material is between the first electrode and the third electrode,

wherein at least a portion of the first electrode is in contact with the photoelectric conversion layer,

wherein at least a portion of the insulating material is disposed between the first electrode and the photoelectric conversion layer; and

wherein, in a cross-sectional view, a first width in a lateral direction of a portion of the photoelectric conversion layer in contact with the first electrode is smaller than a second width in the lateral direction of a portion of the photoelectric conversion layer at a same level as an upper surface of the insulating material.

2. The imaging device according to claim 1 , further comprising:

a first region of the insulating material between the third electrode and the photoelectric conversion layer; and

a second region of the insulating material between the third electrode and the first electrode, wherein the second region of the insulating material includes a first insulating layer including the insulating material and a second insulating layer including the insulating material, and wherein the first insulating layer is stacked on the second insulating layer.

3. The imaging device according to claim 2 , wherein a portion of the first insulating layer in the second region is between the first electrode and the photoelectric conversion layer.

4. The imaging device according to claim 2 , wherein the first region and the second region include a different number of insulating layers including the insulating material.

5. The imaging device according to claim 1 , further comprising:

a transfer control electrode between the first electrode and the third electrode.

6. The imaging device according to claim 5 , wherein during a charge storage operation, a potential applied to the transfer control electrode is less than a potential applied to the third electrode.

7. The imaging device according to claim 5 , wherein the substrate includes a third photoelectric conversion unit, and wherein each of the first, second, and third photoelectric conversion units are coupled to separate signal lines.

8. The imaging device according to claim 1 , further comprising:

a charge ejection electrode separate and apart from the first electrode and the third electrode, wherein the photoelectric conversion layer contacts the charge ejection electrode.

9. The imaging device according to claim 8 , wherein the charge ejection electrode surrounds the first electrode and the third electrode.

10. The imaging device according to claim 1 , further comprising:

a plurality of third electrode segments.

11. The imaging device according to claim 10 , wherein a potential of a third electrode segment located at a position closest to the first electrode is greater than a potential of a third electrode segment located at a position farthest from the first electrode.

12. The imaging device according to claim 1 , wherein the photoelectric conversion layer includes a stacked layer structure including a lower semiconductor layer and an upper photoelectric conversion layer.

13. The imaging device according to claim 12 , wherein a material composition of the lower semiconductor layer located above the third electrode is different from a material composition of the lower semiconductor layer located above the first electrode.

14. The imaging device according to claim 12 , wherein the lower semiconductor layer includes an oxide semiconductor layer.

15. The imaging device according to claim 1 , wherein during a charge storage period, a potential applied to the third electrode is greater than a potential applied to the first electrode.

16. The imaging device according to claim 1 , wherein a thickness of the insulating material between the upper surface of the first electrode and the photoelectric conversion layer increases at a third electrode side of the first electrode as a distance between the first electrode and the third electrode decreases.

17. The imaging device according to claim 1 , wherein the imaging device is a back-illuminated type imaging device.

18. The imaging device according to claim 14 , wherein the oxide semiconductor layer includes indium.

19. An electronic apparatus, comprising:

an imaging device including:

a substrate including a first photoelectric conversion unit; and

a second photoelectric conversion unit at a light-incident side of the substrate, the second photoelectric conversion unit including:

a photoelectric conversion layer;

a first electrode;

a second electrode above the photoelectric conversion layer;

a third electrode; and

an insulating material between the third electrode and the photoelectric conversion layer,

wherein a portion of the insulating material is between the first electrode and the third electrode,

wherein at least a portion of the first electrode is in contact with the photoelectric conversion layer, and

wherein, in a cross-sectional view, a first width in a lateral direction of a portion of the photoelectric conversion layer in contact with the first electrode is smaller than a second width in the lateral direction of a portion of the photoelectric conversion layer at a same level as an upper surface of the insulating material;

a lens configured to direct light onto a surface of the imaging device; and

circuitry configured to control output signals from the imaging device.

20. The electronic apparatus according to claim 19 , wherein the imaging device further comprises:

a first region of the insulating material between the third electrode and the photoelectric conversion layer; and

a second region of the insulating material between the third electrode and the first electrode, wherein the second region of the insulating material includes a first insulating layer including the insulating material and a second insulating layer including the insulating material, and wherein the first insulating layer is stacked on the second insulating layer.

21. The electronic apparatus according to claim 20 , wherein a portion of the first insulating layer in the second region is between the first electrode and the photoelectric conversion layer.

22. The electronic apparatus according to claim 19 , wherein at least a portion of the insulating material is disposed between the first electrode and the photoelectric conversion layer.

23. A method of driving an imaging device, the method comprising:

applying a first potential to a third electrode during a charging period;

applying a second potential to a first electrode during the charging period, wherein the first potential is greater than the second potential;

applying a third potential to the third electrode during a charge transfer period; and

applying a fourth potential to the first electrode during the charge transfer period, wherein the fourth potential is greater than the third potential, and

wherein the imaging device includes:

a substrate including a first photoelectric conversion unit; and

a second photoelectric conversion unit at a light-incident side of the substrate, the second photoelectric conversion unit including:

a photoelectric conversion layer;

the first electrode;

a second electrode above the photoelectric conversion layer;

the third electrode; and

an insulating material between the third electrode and the photoelectric conversion layer,

wherein a portion of the insulating material is between the first electrode and the third electrode,

wherein at least a portion of the insulating material is disposed between the first electrode and the photoelectric conversion layer, and

wherein, in a cross-sectional view, a first width in a lateral direction of a portion of the photoelectric conversion layer in contact with the first electrode is smaller than a second width in the lateral direction of a portion of the photoelectric conversion layer at a same level as an upper surface of the insulating material.

24. The method of driving an imaging device according to claim 23 , wherein the imaging device further includes:

a first region of the insulating material between the third electrode and the photoelectric conversion layer; and

a second region of the insulating material between the third electrode and the first electrode, wherein the second region of the insulating material includes a first insulating layer including the insulating material and a second insulating layer including the insulating material, and wherein the first insulating layer is stacked on the second insulating layer.

25. The method according to claim 23 , wherein at least a portion of the first electrode is in contact with the photoelectric conversion layer.