IP Library › Granted Patent US 10,805,716
Granted Patent B2
US 10,805,716 · App. 15/554,623 · Granted Oct 13, 2020

Package structure of MEMS microphone

Inventor: Guoguang Zheng (Weifang, CN)
Assignee: GOERTEK.INC
H04R1/2807H04R1/222H04R1/2876H04R19/04H04R19/005H04R2201/003
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Quick Facts
Patent No.
US 10,805,716
App. No.
15/554,623
Granted
Oct 13, 2020
Kind
B2
Abstract

The present invention discloses a package structure of a MEMS microphone. The package structure comprises a package substrate and a package shell, wherein the package shell is provided on the package substrate and forms a closed cavity with the package substrate. In the package structure provided by the present invention, the sound-absorbing layer is arranged on the inner wall of the Helmholtz resonant cavity. The sound-absorbing layer has a certain absorption capacity to high-frequency sound waves, but has a very low absorption to low-frequency sound waves, so it may be equivalent to a “low-pass filter”. Through the absorption of the high-frequency sound waves, a high-frequency amplitude value of sound waves can be suppressed, reducing high-frequency response of the Helmholtz resonant cavity. That is, a high-frequency cut-off frequency of the sound waves is improved, widening operation bandwidth of the MEMS microphone.

Claims (18)

1. A package structure of a MEMS microphone, the package structure comprising: a package substrate and a package shell, the package shell being provided on the package substrate and forming a closed cavity with the package substrate, and further comprising a sound hole allowing sound to flow into the closed cavity, wherein the package shell, the package substrate and the sound hole together constitute a Helmholtz resonant cavity with a high resonant frequency, in which a MEMS chip and an ASIC chip are provided; and at least part of an inner wall of the Helmholtz resonant cavity is provided with a sound-absorbing layer configured as a low-pass filter having an absorption capacity to high-frequency sound waves but a very low absorption to low-frequency sound waves, while the thickness of the sound-absorbing layer does not excessively destroy resonance characteristics of the Helmholtz resonant cavity.

2. The package structure according to claim 1 , wherein the sound-absorbing layer is provided on the inner wall(s) of the top and/or the side of the package shell.

3. The package structure according to claim 1 , wherein the sound-absorbing layer is provided on the inner wall of the package substrate.

4. The package structure according to claim 1 , wherein the sound-absorbing layer is of a mesh structure.

5. The package structure according to claim 1 , wherein the sound-absorbing layer is provided in a coating manner.

6. The package structure according to claim 1 , wherein the sound-absorbing layer is polyimide.

7. The package structure according to claim 1 , wherein a sound-permeable layer covering the sound hole is further provided at the sound hole of the package shell.

8. The package structure according to claim 1 , wherein the sound-absorbing layer is further provided on the surface of the ASIC chip.

9. The package structure according to claim 1 , wherein the MEMS chip and the ASIC chip are provided on the package substrate; and the sound hole is provided on the package shell.

10. The package structure according to claim 1 , wherein the package shell is in the form of a flat plate, and the package structure further comprises a side wall portion for supporting the package shell on the package substrate.

11. The package structure according to claim 2 , wherein the sound-absorbing layer is of a mesh structure.

12. The package structure according to claim 2 , wherein the sound-absorbing layer is provided in a coating manner.

13. The package structure according to claim 2 , wherein the sound-absorbing layer is polyimide.

14. The package structure according to claim 2 , wherein a sound-permeable layer covering the sound hole is further provided at the sound hole of the package shell.

15. The package structure according to claim 3 , wherein the sound-absorbing layer is of a mesh structure.

16. The package structure according to claim 3 , wherein the sound-absorbing layer is provided in a coating manner.

17. The package structure according to claim 3 , wherein the sound-absorbing layer is polyimide.

18. The package structure according to claim 3 , wherein a sound-permeable layer covering the sound hole is further provided at the sound hole of the package shell.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2020
From: GOERTEK, INC.
To: WEIFANG GOERTEK MICROELECTRONICS CO., LTD.
Reel/Frame 052846/0443 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 30, 2017
From: ZHENG, GUOGUANG
To: GOERTEK.INC
Reel/Frame 043725/0268 →
Priority Claims (1)
CN 2015 1 0227099 · May 6, 2015 · national
Continuity (1)
Related Publication 20180054669A1 · Feb 22, 2018
Cited By (1)
US 12,200,431