Plasma processing method and plasma processing apparatus
View Patent ↗The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.
1. A plasma processing method for forming a mask by plasma etching a laminated film having an amorphous carbon film containing boron,
wherein the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.
2. The plasma processing method according to claim 1 , wherein the fluorine-containing gas is CHF 3 gas, CH 2 F 2 gas, CH 3 F gas, NF 3 gas, CF 4 gas, or SF 6 gas, and
the halogen gas is Cl 2 gas, HBr gas, or HI gas.
3. The plasma processing method according to claim 1 , wherein a flow rate ratio of the halogen gas with respect to the mixed gas is higher than a flow rate ratio of the fluorine-containing gas with respect to the mixed gas.
4. The plasma processing method according to claim 1 , wherein the boron-containing amorphous carbon film is plasma-etched by supplying a radio frequency power of 1000 W or more to a sample stand on which a sample on which the laminated film is formed is placed or by applying a radio frequency peak-to-peak voltage of 1350 V or more to the sample stand.
5. The plasma processing method according to claim 1 , wherein a pressure is set to 4 Pa or more to plasma-etch the boron-containing amorphous carbon film.
6. The plasma processing method according to claim 1 , wherein the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of O 2 gas, CHF 3 gas, Cl 2 gas, and SiCl 4 gas.
7. A plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film,
wherein the amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.